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采用嵌段共聚物自组装技术实现的柔性单二极管-单相变存储阵列

Flexible One Diode-One Phase Change Memory Array Enabled by Block Copolymer Self-Assembly

作者：Beom Ho Mun;Byoung Kuk You;Se Ryeun Yang;Hyeon Gyun Yoo;Jong Min Kim;Woon Ik Park;You Yin;Myunghwan Byun;Yeon Sik Jung;Keon Jae Lee;

关键词：flexible electronics,flexible memory,one diode-one resistor,phase change memory,block copolymers,self-assembly

DOI：https://doi.org/10.1021/acsnano.5b00230

发表时间：2015年

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摘要

柔性存储器是柔性电子系统中数据处理、存储和射频通信的基本组件。在众多新兴存储技术中，相变随机存取存储器（PRAM）是下一代非易失性存储器的最有力候选者之一，因为它具有很大的循环耐久性、高速度和优秀的可扩展性。尽管柔性相变存储器（PCM）有一些方法，但高复位电流是柔性PCM设备实际运行的最大障碍。本文报道了一种灵活的PCM，通过将源自含硅嵌段共聚物（BCP）的纳米绝缘体纳入其中，显著降低了塑料基底上形成的柔性存储器的工作电流。由于BCP纳米结构降低了热应力，使柔性PCM设备与超薄柔性二极管集成在一起，在100个开关周期和1000个弯曲周期内可可靠地运行。


Abstract

Flexible memory is the fundamental component for data processing, storage, and radio frequency communication in flexible electronic systems. Among several emerging memory technologies, phase-change random-access memory (PRAM) is one of the strongest candidate for next-generation nonvolatile memories due to its remarkable merits of large cycling endurance, high speed, and excellent scalability. Although there are a few approaches for flexible phase-change memory (PCM), high reset current is the biggest obstacle for the practical operation of flexible PCM devices. In this paper, we report a flexible PCM realized by incorporating nanoinsulators derived from a Si-containing block copolymer (BCP) to significantly lower the operating current of the flexible memory formed on plastic substrate. The reduction of thermal stress by BCP nanostructures enables the reliable operation of flexible PCM devices integrated with ultrathin flexible diodes during more than 100 switching cycles and 1000 bending cycles.


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