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通过路易斯酸进行二维过渡金属二硫属化物的通用 p 型掺杂

Universal p-Type Doping via Lewis Acid for 2D Transition-Metal Dichalcogenides

作者：Zexin Li;Dongyan Li;Haoyun Wang;Xiang Xu;Lejing Pi;Ping Chen;Tianyou Zhai;Xing Zhou;

关键词：two-dimensional materials,doping,transition-metal dichalcogenides,p−n junction,photodetection

DOI：https://doi.org/10.1021/acsnano.2c00513

发表时间：2022年

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摘要

开发空间控制的通用 p 型过渡金属二硫属化物 (TMD) 掺杂对于光电子学至关重要。在此，提出了一种通过Sn4+离子交换的简便且通用的p型掺杂策略，并以PdSe2的p型掺杂为例进行了系统的论证。通过改变SnCl4溶液的浓度，可以精确地将PdSe2的极性从n型调节到双极性和p型。该调制有效降低了电子浓度，并将功函数提高了~72 meV。此外，可溶液加工的路线使得空间控制掺杂成为可能，这通过构建具有整流行为和光伏效应的横向PdSe2 pn同质结得到了证明。这种 p 掺杂方法已在调制各种 TMD 中得到进一步证明，包括 WSe2、WS2、ReSe2、MoSe2< /sub>、MoTe2 和 PtSe2。这种基于Sn原子取代的空间控制通用方法实现了TMD的p型掺杂。


Abstract

Developing spatially controlled and universal p-type doping of transition-metal dichalcogenides (TMDs) is critical for optoelectronics. Here, a facile and universal p-doping strategy via Sn4+ ions exchanging is proposed and the p-doping of PdSe2 is demonstrated systematically as the example. The polarity of PdSe2 can be modulated from n-type to bipolar and p-type precisely by changing the concentration of SnCl4 solution. The modulation effectively reduces the electron concentration and improves the work function by ∼72 meV. In addition, the solution-processable route makes the spatially controlled doping possible, which is demonstrated by constructing the lateral PdSe2 p-n homojunction with rectification behavior and photovoltaic effect. This p-doping method has been further proved in modulating various TMDs including WSe2, WS2, ReSe2, MoSe2, MoTe2, and PtSe2. This spatially controlled and universal method based on Sn atoms substitution realizes p-type doping of TMDs.


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