DS/EN 60749-23-2004

Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life

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标准号
DS/EN 60749-23-2004
发布日期
2004年06月14日
实施日期
2004年04月29日
废止日期
无
国际标准分类号
31.080.01
发布单位
DK-DS
适用范围
This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as ""burn-in"", may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this standard.

DS/EN 60749-23-2004系列标准

DS/EN 60749-1-2003 DS/EN 60749-10-2003 DS/EN 60749-10/Corr.1-2004 DS/EN 60749-11-2003 DS/EN 60749-11/Corr.1-2003 DS/EN 60749-11/Corr.2-2004 DS/EN 60749-12-2003 DS/EN 60749-12/Corr.1-2004 DS/EN 60749-13-2003 DS/EN 60749-13/Corr.1-2004 DS/EN 60749-14-2004 DS/EN 60749-15-2011 DS/EN 60749-15/AC-2011 DS/EN 60749-16-2003 DS/EN 60749-17-2003 DS/EN 60749-18-2003 DS/EN 60749-19-2003 DS/EN 60749-19/A1-2010 DS/EN 60749-2-2003 DS/EN 60749-2/Corr.1-2004 DS/EN 60749-20-1-2009 DS/EN 60749-20-2010 DS/EN 60749-21-2011 DS/EN 60749-22+Corr.1-2004 DS/EN 60749-23/A1-2011 DS/EN 60749-24-2004 DS/EN 60749-25-2004 DS/EN 60749-26-2006 DS/EN 60749-27-2006 DS/EN 60749-27/A1-2013 DS/EN 60749-29-2011 DS/EN 60749-3-2003 DS/EN 60749-3/Corr.1-2004 DS/EN 60749-30-2005 DS/EN 60749-30/A1-2011 DS/EN 60749-31+Corr.1-2004 DS/EN 60749-32+Corr.1-2004 DS/EN 60749-32/A1-2010 DS/EN 60749-33-2004 DS/EN 60749-34-2011 DS/EN 60749-35-2007 DS/EN 60749-36-2003 DS/EN 60749-37-2008 DS/EN 60749-38-2008 DS/EN 60749-39-2006 DS/EN 60749-4-2003 DS/EN 60749-4/Corr.1-2004 DS/EN 60749-40-2011 DS/EN 60749-5-2003 DS/EN 60749-6-2003 DS/EN 60749-6/Corr.1-2004 DS/EN 60749-7-2011 DS/EN 60749-8+Corr.2-2004 DS/EN 60749-9-2003 DS/EN 60749-9/Corr.1-2004


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