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Three-electrode test and two-electrode

Three-electrode test and two-electrode, Total:500 items.

In the international standard classification, Three-electrode test and two-electrode involves: Optoelectronics. Laser equipment, Electronic tubes, Semiconductor devices, Printed circuits and boards, Electrical and electronic testing, Testing of metals, Nuclear energy engineering, Fibre optic communications, Analytical chemistry, Materials for aerospace construction, Electrical accessories, Solar energy engineering, Fuel cells, Audio, video and audiovisual engineering, Television and radio broadcasting, Electrical engineering in general, Welding, brazing and soldering, Electromechanical components for electronic and telecommunications equipment, Protection against electric shock, Lamps and related equipment, Paints and varnishes, Products of the chemical industry, Electricity. Magnetism. Electrical and magnetic measurements, Surface treatment and coating, Galvanic cells and batteries, Electronic display devices, Medical equipment, Water quality, Non-metalliferous minerals, Electronic components in general, Vacuum technology, Power transmission and distribution networks, Electrical equipment for working in special conditions, Aerospace electric equipment and systems, Shipbuilding and marine structures in general, Protection of and in buildings, Production of metals, Wastes, Construction materials, Corrosion of metals, Resistors, Radiation measurements, Earthworks. Excavations. Foundation construction. Underground works, Non-ferrous metals, Powder metallurgy, Insulating fluids, Mechanical testing, Electronic component assemblies, Burners. Boilers, Geology. Meteorology. Hydrology, Terminology (principles and coordination), Inorganic chemicals, Products of non-ferrous metals, Ceramics, Non-destructive testing.


Professional Standard - Military and Civilian Products, Three-electrode test and two-electrode

  • WJ 2100-2004 Test method for silicon photodiodes and silicon avalanche photodiodes
  • WJ 2506-1998 Verification Regulations for Photodiode Dynamic Tester

Canadian Standards Association (CSA), Three-electrode test and two-electrode

Professional Standard - Electron, Three-electrode test and two-electrode

  • SJ 1388-1978 Methods of measurement for anode conductance of noise-generator diodes
  • SJ 2214.10-1982 Method of measurement for light current of semiconductor photodiodes and phototransistors
  • SJ 1389-1978 Methods of measurement for diodes leakage current between electrodes of noise-generator diodes
  • SJ 2140-1982 Methods of measurement for limiting voltage of silicon current regulator diodes
  • SJ 2214.6-1982 Method of measurement for collector-emitter reverse breakdown voltage of semiconductor phototransistors
  • SJ/T 2354-2015 Measuring methods for photodiodes of PIN、APD
  • SJ/T 2354-2015/0352 Measuring methods for photodiodes of PIN、APD
  • SJ 2354.5-1983 Method of measurement for capacitance of PIN and avalanche photodiodes
  • SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor
  • SJ 2354.3-1983 Method of measurement for dark current of PIN and avalanche photodiodes
  • SJ 1387-1978 Methods of measurement for filament current and filament voltage of noise-generator diodes
  • SJ 1386-1978 Measurement conditions for noise-generator diodes and gas discharge noise tubes
  • SJ 2138-1982 Methods of measurement for regulated current of silicon current regulator diodes
  • SJ 2141-1982 Methods of measurement for breakdown voltage of silicon currenet regulator diodes
  • SJ 2214.8-1982 Method of measurement for dark current voltage of semiconductor phototransistors
  • SJ 2354.1-1983 General procedures of measurement for electrical and optical parameters of PIN and avalanche photodiodes
  • SJ 2354.6-1983 Method of measurement for responsivity of PIN and avalanche photodiodes
  • SJ 2354.13-1983 Method of measurement for multiplication factor of PIN and avalanche photodiodes
  • SJ 2214.3-1982 Method of measurement for dark current of semiconductor photodiodes
  • SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes
  • SJ 2354.2-1983 Method of measurement for reverse break-down voltage of PIN and avalanche photodiodes
  • SJ 1230-1977 Methods of measurement for high frequency rectified current of germanium detector diodes
  • SJ 2354.4-1983 Method of measurement for forward voltage drop of PIN and avalanche photodiodes
  • SJ 2142-1982 Methods of measurement for current temperature coefficient of silicon current regulator diodes
  • SJ 966-1975 Methods of measurement for reverse breakdown voltage of silicon switching diodes
  • SJ 2658.4-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for capacitance
  • SJ 1391-1978 Methods of measurement for voltage standing wave ratio on cold conditions of noise-generator diodes
  • SJ 2354.14-1983 Method of measurement for excess noise factor of PIN and avalanche photodiodes
  • SJ 2215.6-1982 Method of measurement for junction capacitance of semiconductor photocouplers (diodes)
  • SJ/Z 9009-1987 Methods for measurement of direct interelectrode capacitances of electronic tubes and valves
  • SJ 363-1973 Measurement of reflector total current, reflector ion current and reflector leakage current of reflex klystrons
  • SJ 2354.12-1983 Method of measurement for temperature factor of reverse breakdown voltage of PIN and avalanche photodiodes
  • SJ 2658.3-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for backward voltage
  • SJ 2354.10-1983 Method of measurement for cross-light factor of PIN and avalanche photodiodes matrix
  • SJ 2354.11-1983 Method of measurement for width of blind zone of PIN and avalanche photodiode matrix
  • SJ 2215.3-1982 Method of measurement for forward current of semiconductor photocouplers (diodes)
  • SJ 2214.4-1982 Method of measurement for reverse break-down voltage of semiconductor photodiodes
  • SJ 2215.4-1982 Method of measurement for reverse current of semiconductor photocouplers (diodes)
  • SJ 2354.9-1983 Method of measurement for noise equivalent power of PIN and avalanche photodiodes
  • SJ 444-1973 Methods of measurement for anode current and anode current on underheated condition of high-voltage rectifier tubes
  • SJ/Z 9010.1-1987 Measurements of electrical properties of electronic tubes and valves--Part 1: Measurement of electrode current
  • SJ 421-1973 Methods of measurement for leakage current between last anode and each electrode of low noise travelling wave tubes
  • SJ 2215.9-1982 Method of measurement for reverse cut-off current of semiconductor photocouplers transistors
  • SJ 431-1973 Methods of measurement for voltages and currents of O-type backward-wave tube on per-electrodes
  • SJ 2214.9-1982 Method of measurement for pulse rise and fall time of semiconductor photodiodes and phototransistors
  • SJ 2215.7-1982 Method of measurement for collector-emitter reverse breakdown voltage of semiconductor photocouplers (diodes)
  • SJ 2354.8-1983 Method of measurement for pulse rise time and fall time of PIN and avalanche photodiodes
  • SJ 2215.5-1982 Method of measurement for reverse breakdown voltage of semiconductor photocouplers (diodes)
  • SJ 420-1973 Methods of measurement for voltages and currents on per-electrode of low noise travelling wave tubes
  • SJ 2658.5-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for forward series resistance
  • SJ 445-1973 Methods of measurement for cathode pulse emission current and cathode pulse emission current on underheated condition of high-voltage rectifier tubes
  • SJ 2214.7-1982 Method of measurement for saturation voltage of semiconductor phototransistors
  • SJ/Z 9010.15-1987 Measurements of electrical properties of electronic tubes and valves--Part 15: Methods of measurement for spurious and unwanted electrode currents
  • SJ/Z 1171-1977 Methods for determination of polarization curve of electroplating solution
  • SJ 2354.7-1983 Method of measurement for spectral response curve and spectral response range of PIN and avalanche photodiodes
  • SJ 1395-1978 Methods of measurement for anode current and tube voltage drop of gas discharge noise tubes
  • SJ 364-1973 Measurement of cathode current of reflex klystrons
  • SJ 1385-1978 General specification for noise-generator diodes and gas discharge noise tubes
  • SJ/T 2658.3-2015 Measuring method for semiconductor infrared-emitting diode.Part 3:Reverse voltage and reverse current
  • SJ/Z 9010.9-1987 Measurements of electrical properties of electronic tubes and valves--Part 9: Methods of measuring the cathode-interface impedance
  • SJ/Z 9010.14-1987 Measurements of electrical properties of electronic tubes--Part 14: Methods of measurement of radar and osciloscope cathode-ray tubes
  • SJ/T 2658.4-2015 Measuring method for semiconductor infrared-emitting diode.Part 4: Total capacitance
  • SJ/Z 9010.22-1987 Measurement of electrical properties of electronic tubes Part 22 Methods of measurement for cold cathode counter and indicator tubes
  • SJ 455-1973 Methods of measurement for static interelectrode capacitance of high-voltage rectifier tubes
  • SJ 1718-1981 Measurement of cathode pulse current of power klystrons
  • SJ 366-1973 Measurement of interelectrode leakage current of reflex klystrons
  • SJ/Z 9010.24-1987 Measurement of electrical properties of electronic tubes Part 24 Methods of measurement for cathode-ray charge-storage tubes
  • SJ/Z 9010.8-1987 Measurements of electrical properties of electronic tubes and valves--Part 8: Measurement of cathode heating time and heater warm-up time
  • SJ/T 2658.2-2015 Measuring method for semiconductor infrared-emitting diode.Part 2: Forward voltage
  • SJ/T 2658.5-2015 Measuring method for semiconductor infrared-emitting diode.Part 5:Series connection resistance
  • SJ/Z 9010.12-1987 Measurements of electrical properties of electronic tubes and valves--Part 12: Methods of measuring for electrode resistance, transcondductance, amplification factor, conversion resistance and conversion transconductance
  • SJ/Z 9010.13-1987 Measurements of electrical properties of electronic tubes and valves--Part 13: Methods of measurement for emission current from hot cathodes for high-vacuum electronic tubes and valvea
  • SJ/T 10063-1991 Detail specification for electronic components.Silicon switching PIN diodes for types PIN 62A,PIN62B PIN62C and PIN62D

Defense Logistics Agency, Three-electrode test and two-electrode

  • DLA A-A-55168 D-2012 FUSEHOLDER, BLOCK, CLASS H, 30 AMPERE, 250 V AC, ONE, TWO, AND THREE POLE
  • DLA A-A-55426 D-2012 FUSEHOLDER, BLOCK, CLASS H, 60 AMPERE, 600 V AC, ONE, TWO, AND THREE POLE
  • DLA A-A-55427 D-2012 FUSEHOLDER, BLOCK, CLASS H, 60 AMPERE, 250 V AC, ONE, TWO, AND THREE POLE
  • DLA A-A-55428 D-2012 FUSEHOLDER, BLOCK, CLASS H, 30 AMPERE, 600 V AC, ONE, TWO, AND THREE POLE
  • DLA A-A-55429 D-2012 FUSEHOLDER, BLOCK, CLASS H, 100 AMPERE, 600 V AC, ONE, TWO, AND THREE POLE
  • DLA MIL-PRF-19500/656 A-2008 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE OR COMMON ANODE CENTER TAP, TYPES 1N6785 AND 1N6785R, JAN, JANTX, JANTXV AND JANS
  • DLA MIL-DTL-3976/1 B-2007 LIGHT EMITTING DIODE (LED), MARKER CLEARANCE-BLACKOUT, 14 AND 28 VOLT
  • DLA MIL-PRF-19500/507 F-2011 SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036A THROUGH 1N6072A JAN, JANTX, AND JANTXV
  • DLA MIL-PRF-19500/718 VALID NOTICE 1-2008 Semiconductor Device, Diode, Silicon, Bipolar Transient Voltage Suppressor, Types 1N6950 through 1N6986, JAN, JANTX, JANTXV, and JANS
  • DLA MIL-PRF-19500/718 VALID NOTICE 2-2013 Semiconductor Device, Diode, Silicon, Bipolar Transient Voltage Suppressor, Types 1N6950 through 1N6986, JAN, JANTX, JANTXV, and JANS
  • DLA MIL STD 750 4 E-2012 TEST METHOD STANDARD DIODE ELECTRICAL TEST METHODS FOR SEMICONDUCTOR DEVICES PART 4: TEST METHODS 4000 THROUGH 4999
  • DLA DESC-DWG-85031 REV A-1994 CONNECTOR, RECEPTACLE, ELECTRICAL, GENERAL PURPOSE, SINGLE, GROUNDING, 2 POLE, 3 WIRE, 15 AMPERE, 125 VOLTS, ENVIRONMENTAL
  • DLA MIL-PRF-39016/24 F VALID NOTICE 1-2010 Relays, Electromagnetic, Established Reliability, SPDT, Low Level to 1.0 Ampere with Internal Diodes for Coil Transient Suppression and Polarity Reversal Protection
  • DLA MIL-PRF-28776/6 E VALID NOTICE 1-2010 Relays, Hybrid, Established Reliability, DPDT, Low Level to 1.0 Ampere Internal Mosfet drive with Zener Diode Gate Protection (Electromechanical Output) Diode Coil Suppression and Terminals with 0.100 Grid Lead Spacing
  • DLA SMD-5962-91725 REV A-2008 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, SCAN TEST DEVICE WITH OCTAL D-TYPE LATCH, THREE-STATE OUTPUTS, MONOLITHIC SILICON
  • DLA MIL-PRF-19500/642 D VALID NOTICE 1-2012 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6762 Through 1N6765 and 1N6762R Through 1N6765R JANTX, JANTXV, and JANS
  • DLA MIL-PRF-19500/500 E (1)-2013 SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N5555 THROUGH 1N5558, 1N5907, 1N5629A THROUGH 1N5665A, JAN, JANTX, AND JANTXV
  • DLA W-C-596/110 B VALID NOTICE 1-2006 CONNECTOR, RECEPTACLE, ELECTRICAL, MALE INLET, SPECIAL PURPOSE, LOCKING, GROUNDING, 2 POLE, 3 WIRE, 20 AMPERES, 277 VOLTS, 50/60 HERTZ
  • DLA MIL-PRF-39016/28 F VALID NOTICE 1-2010 Relays, Electromagnetic, Established Reliability, SPDT, Low Level to 0.5 Ampere (Latching) with Internal Diodes for Coil Transient Suppression and Polarity Reversal Protection
  • DLA MIL-PRF-19500/644 A VALID NOTICE 2-2011 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6768 Through 1N6771 and 1N6768R Through 1N6771R JAN, JANTX, JANTXV, and JANS
  • DLA W-C-375/12 C-2009 CIRCUIT BREAKERS, MOLDED CASE, BRANCH CIRCUIT AND SERVICE, TYPE I, SERIES TRIP, THREE POLE
  • DLA MIL-PRF-39016/20 J VALID NOTICE 1-2010 Relays, Electromagnetic, Established Reliability, DPDT, Low Level to 1.0 Ampere with Internal Diodes for Coil Transient Suppression and Polarity Reversal Protection
  • DLA MIL-PRF-39016/26 F VALID NOTICE 1-2010 Relays, Electromagnetic, Established Reliability SPDT, Low Level to 1.0 Ampere (Sensitive, 40 Milliwatts) with Internal Diodes for Coil Transient Suppression and Polarity Reversal Protection
  • DLA A-A-55168 C-2007 FUSEHOLDER, BLOCK, CLASS H, 30 AMPERE, 250 V AC, ONE, TWO, AND THREE POLE
  • DLA A-A-55426 C-2007 FUSEHOLDER, BLOCK, CLASS H, 60 AMPERE, 600 V AC, ONE, TWO, AND THREE POLE
  • DLA A-A-55427 C-2007 FUSEHOLDER, BLOCK, CLASS H, 60 AMPERE, 250 V AC, ONE, TWO, AND THREE POLE
  • DLA A-A-55428 C-2007 FUSEHOLDER, BLOCK, CLASS H, 30 AMPERE, 600 V AC, ONE, TWO, AND THREE POLE
  • DLA A-A-55429 C-2007 FUSEHOLDER, BLOCK, CLASS H, 100 AMPERE, 600 V AC, ONE, TWO, AND THREE POLE
  • DLA MIL-PRF-19500/259 A NOTICE 2-1999 SEMICONDUCTOR DEVICES, DIODES, SILICON, POWER RECTIFIERS TYPES JAN-1N1130 AND JAN-1N1131

CZ-CSN, Three-electrode test and two-electrode

  • CSN 35 8736-1964 Semiconductor diodes. Measurement of interelectrode capacitanoe
  • CSN 35 8757 Cast.1-1985 Transistors. Measuring method of collector-base and emitterbase breakdown voltage
  • CSN 35 8735-1964 Semiconductor diodes. Measurement of d. c. currents and voltages
  • CSN 35 8732-1964 Semiconductor diodes. Measurement of forward current
  • CSN 35 8786-1983 Varicaps. Electric parameter measurement methods
  • CSN 35 8539-1968 Methods of testing anodě resistance of electronic tubes
  • CSN 35 8542-1968 Methods of testing interelectrode capacitances of electronio tubes
  • CSN 35 8734-1975 Semieonductor devices. Diodcs. Measurement of reverse current.
  • CSN 35 8585 Cast.1-1984 Television picture tubes. Measuring method of heating current, anodě current and cathode current
  • CSN 35 8757 Cast.5-1985 Transistors. Method of measuring collector and emitter barrier layer capacltance
  • CSN 35 8767-1982 Semiconductor diodes Methods of electrical parameters measurement
  • CSN 35 8737-1975 Semiconductor devices. Diodes. Measurement of differential rosistanoe
  • CSN 35 8761-1973 Semiconductor devices. Phototransistors photodíodes. Measurement of photoelectric current
  • CSN 35 8762-1973 Semiconductor devices. Phototransistors photodiodes. Measurement of dark current
  • CSN 35 8733-1975 Semiconductor devices. Diodes. Measurement of reverse voltago (working voltago)
  • CSN 35 8760-1973 Seraiconductors. Stabilizing diodes. Measurement of voltage temperature coefficient
  • CSN 35 8769-1983 Semiconductor Zener diodes. Electric parameters measurement methods
  • CSN 35 8768-1983 Semiconductor switching diodes. Electric parameters measurement methods
  • CSN 35 8766-1976 Semieonductor devices. Switching diodes. Measurement cf forward volíage.
  • CSN 35 8731-1975 Semiconductor devices. Diodes Measurement of d. c. forward voltage
  • CSN 35 8763-1973 Semiconductor devices. Diodes. Measurement o? reverse breakdown voltage
  • CSN 35 8771-1970 Thyristors. Method of measuring gate trigger voltage and gate trigger current
  • CSN 35 8785-1975 Semiconductor devices. Varicaps. Measurement of thermal capacitance coefflcient.
  • CSN 35 8781-1983 Mixing and detection semiconductor UHF diodes Electric parameter Measurement methods
  • CSN 65 1055-1981 Aluminium oxide, Determina- oin of zinc oxide. Atomic bsorption, photometric and olarografie methods
  • CSN 35 8765-1976 Semiconductor devices. Switching diodes. Measurement of reverse recovery charge.

RU-GOST R, Three-electrode test and two-electrode

  • GOST 21107.10-1978 Gas discharge devices. Methods of measurement of electrical parameters of operating and measuring conditions for glow-discharge thyratrons and gas-filled rectifiers
  • GOST 21107.13-1978 Gas discharge devices. Methods of measurement of electrical parameters of operating and measuring conditions for pulsed thyratrons and gas-filled rectifiers
  • GOST 21011.2-1976 High-voltage kenotrons. The anode current measurement method within the voltage pulse
  • GOST 19138.2-1985 Triode thyristors. Method for measuring trigger direct and peak gate current and trigger direct and peak gate voltage
  • GOST 18986.10-1974 Semiconductor diodes. Methods for measuring inductance
  • GOST 18986.4-1973 Semiconductor diodes. Methods for measuring capacitance
  • GOST 19438.12-1975 Low-power electronic tubes and valves. Methods of measurement of plate current and currents of grids having positive potential
  • GOST 18986.6-1973 Semiconductor diodes. Method for measuring recovery charge
  • GOST 18986.24-1983 Semiconductor diodes. Measurement method of breakdown voltage
  • GOST 21106.6-1977 Oscillator, modulator and regulation tubes with anode dissipated power above 25 W. Measurement methods of currents of anode and grids, having positive voltage relative to cathode and zero anode and grids currents
  • GOST 21107.9-1976 Gas-discharge devices. Methods of measurement of electrial parameters of pulse thyratrons
  • GOST 18986.0-1974 Semiconductor diodes. Measuring methods for electrical parameters. General requirements
  • GOST 21011.4-1977 High-voltage kenotrons. Test methods of electric strength
  • GOST 21059.6-1979 Monochrome and colour TV picture tubes. Measurement techniques of heater current, anode current and cathode current
  • GOST 21107.8-1976 Gas discharge devices. Measuring methods of electrical characteristics of impulsive diodes
  • GOST 21011.3-1977 High-voltage kenotrons. Heater current measuring method
  • GOST 21011.7-1980 High-voltage kenotrons. The emission current measurement method
  • GOST 18986.1-1973 Semiconductor diodes. Method for measuring direct reverse current
  • GOST 18986.14-1985 Semiconductor diodes. Methods for measuring differential and slope resistances
  • GOST 28625-1990 Semiconductor devices. Discrete devices. Part 3. Signal (including switching) and regulator diodes. Section 2. Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diod
  • GOST 25995-1983 Electrodes for measurement of bioelectric potentials. General technical requirements and test methods
  • GOST 19656.0-1974 Semiconductor UHF diodes. Measurement methods of electrical parameters. General conditions
  • GOST 21011.6-1978 High-voltage kenotrons. Test method for multiple switching on and switching off the heating voltage
  • GOST R 59566-2021 Nanomanufacturing. Key control characteristics. Part 4-5. Cathode nanomaterials for nano-enabled electrical energy storage. Determination of electrochemical characteristics with 3-electrode cell
  • GOST R IEC 62561-5-2014 Lightning protection system components. Part 5. Requirements for earth electrode inspection housings and earth electrode seals
  • GOST 19656.15-1984 Semiconductor UHF diodes. Measurement methods of thermal resistance and pulse thermal resistance
  • GOST 21011.0-1975 High-voltage kenotrons. Methods measurements of electric parameters. General requirements
  • GOST 18986.3-1973 Semiconductor diodes. Method of measuring of direct forward voltage and direct forward current
  • GOST 19656.7-1974 Semiconductor UHF detector diodes. Measurement method of current sensitivity
  • GOST 21106.12-1977 Oscillator, modulator and regulation tubes with anode dissipated power above 25 W. Method of measurement of leakage currents between electrodes and between cathode and heater
  • GOST 18986.16-1972 Rectifier diodes. Methods of measuring average forward voltage and average reverse current
  • GOST 18986.9-1973 Semiconductor diodes. Method for measuring pulse direct voltage and forword recovery time
  • GOST 19656.1-1974 Semiconductor UHF mixer and detector diodes. Measurement method of voltage standing-wave ratio
  • GOST 21106.9-1977 Oscillator, modulator and regulation tubes with anode dissipated power above 25 W. Method of measurements of pulse anode and grids currents
  • GOST 19656.2-1974 Semiconductor UHF mixer diodes. Measurement method of rectified current
  • GOST 19656.3-1974 Semiconductor UHF mixer diodes. Measurement methods of output impedance at an intermediate frequency
  • GOST 19656.10-1988 Semiconductor microwave switching and limiter diodes. Methods of measuring loss resistances
  • GOST 18720.18-1985 Television camera tubes. Methods of measuring insulation resistance and leakage cuvvent between electrodes
  • GOST 18986.13-1974 Semiconductor tunnel diodes. Methods for measuring peak point current, valley point current, peak point voltage, valley point voltage, projected peak point voltage
  • GOST 28106-2015 Copper cathodes. Sampling and preparation of samples and pieces for determination of electrical resistivity
  • GOST 21106.10-1977 Oscillator, modulator and regulation tubes with anode dissipated power above 25 W. Methods of measurements of reverse control grid and anode currents
  • GOST 22091.12-1984 X-ray devices. The methods of measuring of currents and electrode voltage per pulse
  • GOST R ISO 11713-2014 Carbonaceous materials used in the production of aluminium. Cathode blocks and baked anodes. Determination of electrical resistivity at ambient temperature

British Standards Institution (BSI), Three-electrode test and two-electrode

  • BS IEC 60747-5-8:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
  • BS IEC 60747-5-11:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of radiative and nonradiative currents of light emitting diodes
  • PD IEC/TS 62916:2017 Photovoltaic modules. Bypass diode electrostatic discharge susceptibility testing
  • BS 7310:1990 Specification for ion-selective electrodes, reference electrodes, combination electrodes and ion-selective electrode meters for determination of ions in solution
  • BS IEC 60747-5-16:2023 Semiconductor devices - Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
  • BS PD IEC/TS 62916:2017 Photovoltaic modules. Bypass diode electrostatic discharge susceptibility testing
  • 18/30367363 DC BS IEC 60747-5-8. Semiconductor devices. Part 5-8. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
  • 18/30388245 DC BS EN IEC 60747-5-11. Semiconductor devices. Part 5-11. Optoelectronic devices. Light emitting diodes. Test method of radiative and nonradiative currents of light emitting diodes
  • BS E9375:1975 Specification - Harmonized system of quality assessment for electronic components - Blank detail specification: voltage regulator diodes and voltage reference diodes excluding precision-voltage temperature-compensated reference diodes
  • BS EN 120001:1993 Harmonized system of quality assessment for electronic components. Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
  • BS G 228:1981 Specification for clearance and fixing dimensions for 2 A and 3 A, two- and four-pole sealed electromagnetic relays for aircraft
  • BS 6043-3.6:2000 Methods of sampling and test for carbonaceous materials used in aluminium manufacture. Electrodes. Determination of electrical resistivity of cathode blocks and prebaked anodes at ambient temperature
  • BS 6043-3.2:1997 Methods of sampling and test for carbonaceous materials used in aluminium manufacture. Electrodes. Determination of density of cathode blocks and prebaked anodes
  • BS EN 120001:1991 Harmonized system of quality assessment for electronic components - Blank detail specification - Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
  • PD IEC TR 60747-5-12:2021 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of LED efficiencies
  • BS IEC 60747-5-15:2022 Semiconductor devices - Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage based on the electroreflectance spectroscopy
  • BS 6043-3.1.2:1999 Methods of sampling and test for carbonaceous materials used in aluminium manufacture. Electrodes. Sampling. Sampling of anodes
  • BS 6043-3.1.1:1999 Methods of sampling and test for carbonaceous materials used in aluminium manufacture. Electrodes. Sampling. Sampling of cathodes
  • BS 6043-3.5.1:2000 Methods of sampling and test for carbonaceous materials used in aluminium manufacture - Electrodes - Determination of flexural strength - Three point method
  • BS EN 62341-6-1:2011 Organic light emitting diode (OLED) displays. Measuring methods of optical and electro-optical parameters
  • BS ISO 3079:2022 Two-electrode method using acetic acid to measure pitting potential of aluminium and aluminium alloys in chloride solutions
  • BS 6043-3.3:2000 Methods of sampling and test for carbonaceous materials used in aluminium manufacture - Electrodes - Determination of the bulk density (apparent density) of cathode blocks and prebaked anodes using a dimensions method
  • BS IEC 60747-2:2000 Discrete semiconductor devices and integrated circuits - Rectifier diodes
  • PD IEC TS 63109:2022 Photovoltaic (PV) modules and cells. Measurement of diode ideality factor by quantitative analysis of electroluminescence images
  • BS EN ISO 2376:2010 Anodizing of aluminium and its alloys. Determination of electric breakdown potential
  • BS IEC 60747-5-9:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of the internal quantum efficiency based on the temperature-dependent electroluminescence

RO-ASRO, Three-electrode test and two-electrode

  • STAS 12123/3-1983 Semiconductor devices VOLTAGE REFERENCE DIODES AND VOLTAGE REGULATOR DIODES Measuring methodes for electrical characteristics
  • STAS 7128/7-1986 LETTER SYMBOLS FOR SEMICONDUCTOR DEVICES AND INTEGRATED C1RCUITS Symbols for variable capacitance diodes and mixer diodes
  • STAS 12123/2-1983 Semiconductor devices LOW POWER SIGNAL DIODES, INCLUDING SWITCHING DIODES Measuring methods for electrical characteristics
  • STAS 12258/2-1984 Optoelectronic semiconductor devices PIIOTODIODES Terminology and essentia] characteristics
  • STAS 12123/4-1984 Semiconductor devices VARIABLE-CAPACITANCE DIODES Measuring methodes for electrical characteristics
  • STAS 12123/1-1982 Semiconductor devices RECTIFIER DIODES Measuring methods for electrical and thermal characteristics
  • STAS 12258/4-1986 Optoelectronic semiconductor devices LIGHT EMITTING DIODES Terminology and main characteristics
  • STAS 7128/4-1971 SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS Letter symbols for lunnel diodes
  • STAS 12258/6-1987 OPTOELECTRONIC SEMICON- DUCTOR DEVICES INFRARED EMM1TING DIODES Terminology and essential characteristics
  • STAS 7128/5-1985 LETTER SYMBOLS FOR SEMICON- DUCTOR DEVICES AND INTEGRA- TED NICROCIRCUITS Symbols for rectifier diodes
  • STAS 7128/12-1985 LETTER SYMBOLS FOR EMICONDUCTOR DEVICES ND INTEGRATED CIRCU1TS ymbols lor voltage reference and voltage egulator diodes

Taiwan Provincial Standard of the People's Republic of China, Three-electrode test and two-electrode

  • CNS 8105-1981 Test Method for Transistor Collector - Emitter Saturation Voltage
  • CNS 5764-1980 Voltage Regulator Diode Noise Voltage Measurement
  • CNS 13780-1996 Endurance Testing Methods for Infrared Emitting Diodes (for Automation)-Continuously Applying Voltage Test
  • CNS 13090-1992 Method of Endurance Test for Light Emitting Diode Big Lamps (for Outdoor Display)-Continuouus Applying Current Test

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Three-electrode test and two-electrode

  • GB/T 3789.2-1991 Measurements of the electrical properties of transmitting tubes--Measuring methods of current of anode and grid
  • GB/T 23729-2009 Photodiodes for scintillation detectors.Test procedures
  • GB/T 3789.11-1991 Measurements of the electrical properties of transmitting tubes--Measuring methods of grid No3 cut-off voltage
  • GB/T 7274-2015 Methods for the measurement of direct inter-electrode capacitances of electronic tubes and valves
  • GB/T 7274-1987 Methods for the measurement of direct interelectrode capacitances of electronic tubes and valves
  • GB/T 3789.23-1991 Measurements of the electrical properties of transmitting tubes--Measuring methods of grid No3 control ability
  • GB/T 6589-2002 Semiconductor devices discrete devices Part 3-2: Signal (including switching) and regulator diodes blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes)
  • GB/T 13063-1991 Blank detail specification for current-regulator and current-reference diodes
  • GB/T 20871.61-2013 Organic light emitting diode (OLED) displays.Part 6-1:Measuring methods of optical and electro-optical parameters
  • GB/T 41760-2022 Test method for spontaneous polarization of tourmaline
  • GB/T 3789.8-1991 Measurements of the electrical properties of transmitting tubes--Measuring methods of maximum anode dissipation power and anode overload dissipation power
  • GB/T 3789.3-1991 Measurements of the electrical properties of transmitting tubes--Measuring methods of cathode emission current
  • GB/T 3789.4-1991 Measurements of the electrical properties of transmitting tubes--Measuring methods of reverse grids current
  • GB/T 3789.5-1991 Measurements of the electrical properties of transmitting tubes--Measuring methods of grid thermo-emission current
  • GB/T 3789.20-1991 Measurements of the electrical properties of transmitting tubes--Measuring methods of grid No1 current cut-off voltage
  • GB/T 3789.10-1991 Measurements of the electrical properties of transmitting tubes--Measuring methods of grid No1 cut-off voltage
  • GB/T 3789.12-1991 Measurements of the electrical properties of transmitting tubes--Measuring methods of interelectrode insulation
  • GB/T 43092-2023 High-temperature performance test method for electrochemical performance testing of lithium-ion battery cathode materials
  • GB/T 24488-2009 Test method for electrochemical properties of magnesium alloys sacrificial anode
  • GB/T 20042.5-2009 Proton exchange membrane fuel cell.Part 5:Test method for membrane electrode assembly
  • GB/T 3789.7-1991 Measurements of the electrical properties of transmitting tubes--Measuring methods of anode ion current
  • GB/T 24196-2009 Corrosion of metals and alloys.Electrochemical test methods.Cuidelines for conducting potentiostatic and potentiodynamic polarization measurements
  • GB/T 3789.18-1991 Measurements of the electrical properties of transmitting tubes--Measuring methods of high frequency loss for interelectrode insulators
  • GB/Z 27753-2011 Test method for adaptability to operating conditions of membrane electrode assembly used in PEM fuel cells
  • GB/T 26295-2010 Carbonaceous materials used in the production of aluminium.Prebaked anodes and cathode blocks.Determination of flexural strength by the four-point method
  • GB/T 13369-1992 Determination of chlorine in uranium dioxide powders and pellets by pyrohydrolysis ion-selective electrode method
  • GB/T 11844-1989 Uranium dioxide powder and pellets--Determination of fluorine--Pyrohydrolysis ion-selective electrode method

Korean Agency for Technology and Standards (KATS), Three-electrode test and two-electrode

  • KS C 6991-2013 TEST METHODS OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
  • KS C 5205-2002 RELIABILITY ASSURED VOLTAGE REGULATOR DIODES AND VOLTAGE REFERENCE DIODES
  • KS C 6991-2001 Test methods of photodiodes for fiber optic transmission
  • KS C 6906-2001 Test methods of laser diodes for fiber optic transmission
  • KS C IEC 60747-3-2:2006 Semiconductor devices-Discrete devices-Part 3:Signal (including switching) and regulator diodes-Section Two:Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes
  • KS C 6991-2001(2011) TEST METHODS OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
  • KS B 0891-1974 Method of test for fillet weld of covered electrode
  • KS C IEC 60747-3-2-2006(2021) Semiconductor devices-Discrete devices-Part 3:Signal (including switching) and regulator diodes-Section Two:Blank detail specification for voltage-regulator diodes and voltage-reference diodes, exclud
  • KS C IEC 60747-3-2-2006(2016) Semiconductor devices-Discrete devices-Part 3:Signal (including switching) and regulator diodes-Section Two:Blank detail specification for voltage-regulator diodes and voltage-reference diodes, exclud
  • KS C 6050-1985(2000) MEASURING METHODS FOR BIPOLAR DIGITAL INTEGRATED CIRCUITS
  • KS C 6050-1985 MEASURING METHODS FOR BIPOLAR DIGITAL INTEGRATED CIRCUITS
  • KS C 5209-2002 RELIABILITY ASSURED BI-DIRECTIONAL TRIODE THYRISTORS (HIGH AND MEDIUM CURRENT)
  • KS B 0892-1971 Method of deposition rate measurement
  • KS F 2736-2015 Testing method for polarization resistance of reinforcing bar in concrete
  • KS C 6704-2003 TEST METHODS OF LASER DIODES USED FOR RECORDING AND PLAYBACK
  • KS A ISO 9006:2008 Uranium metal and uranium dioxide powder and pellets-Determination of nitrogen content-Method using ammonia-sensing electrode
  • KS C 2712-2001 Test methods of negative temperature coefficient thermistor
  • KS C 5207-2002 RELIABILITY ASSURED REVERSE BLOCKING TRIODE THYRISTORS (HIGH AND MEDIUM CURRENT)
  • KS M ISO 11713:2004 Carbonaceous materials used in the production of aluminium-Cathode blocks and baked anodes-Determination of electrical resistivity at ambient temperature
  • KS M ISO 11713:2013 Carbonaceous materials used in the production of aluminium-Cathode blocks and baked anodes-Determination of electrical resistivity at ambient temperature
  • KS C IEC 60151-1-2004(2009) Measurements of the electrical properties of electronic tubes and valves-Part 1:Measurement of electrode current
  • KS A ISO 9006-2008(2018) Uranium metal and uranium dioxide powder and pellets-Determination of nitrogen content-Method using ammonia-sensing electrode
  • KS M ISO 11713-2004(2009) Carbonaceous materials used in the production of aluminium-Cathode blocks and baked anodes-Determination of electrical resistivity at ambient temperature
  • KS C IEC 60747-2-2-2006(2021) Semiconductor devices-Discrete devices-Part 2:Rectifier diodes-Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for current
  • KS C IEC 60747-2-2-2006(2016) Semiconductor devices-Discrete devices-Part 2:Rectifier diodes-Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for current
  • KS D ISO 17475-2017(2022) Corrosion of metals and alloys-Electrochemical test methods-Guidelines for conducting potentiostatic and potentiodynamic polarization measurements
  • KS D ISO 2376:2012 Anodizing of aluminium and its alloys-Determination of electric breakdown potential
  • KS D ISO 2376:2013 Anodizing of aluminium and its alloys-Determination of electric breakdown potential
  • KS M 1077-2008 Determination of lead and cadmium in anode N substance for lithium cell
  • KS C IEC 60747-2-2:2006 Semiconductor devices-Discrete devices-Part 2:Rectifier diodes-Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
  • KS C IEC 60747-2-1:2006 Semiconductor devices-Discrete devices-Part 2:Rectifier diodes-Section one:Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A
  • KS L 1640-2021 Test methods for polarization of ceramic-based electrochemical cell by current interrupt technique

PL-PKN, Three-electrode test and two-electrode

  • PN T01504-22-1987 Transistors Measuring methods Collector-base and emitter-base capacitances Ccbo and Cebo
  • PN T01504-61-1987 Diodes Measuring methods Recovered charge Q,
  • PN T01504-67-1987 Diodes Measuring methods Series equivalent resistance
  • PN T06516-1990 ?on — selective elektrodes General re?uirements and tests
  • PN T01010 ArkusZ05-1974 Electronic tubes Vacuum diodes Terms and definitions
  • PN T04812-1971 Test o? electric strength for booster diodes and lin? outpu? tubes in horisontal deflection circuits
  • PN S76105-1973 Spark gap with three elek?rodes for ?es?ing igni?ion devices of mo?or vehicles
  • PN E05030-05-1986 Corrosion protection Cathodic protection Galvanic anodes Requirements and tests
  • PN T04830-05-1985 Electronic tubes Colour picture tubes Methods of measurement of filament current, anod? current and cathode current
  • PN T80006-1988 Electronic components Aluminium electrolytic polar capacitors General requirements and tests
  • PN M69161-1990 Welding Insulated electrode hold?rs for manua? welding Re?uirements and tests
  • PN T01504-10-1987 Transistors Measuring tnethod Collector-emitter sustaining voltage UcEO(sm) and Uceiusus)
  • PN T01504-60-1987 Diodes Measuring methods Instant and peak forward recovery voltages Ufr, Ufrm and forward recovery time tfr
  • PN C04576-10-1986 Water and waste water Tests for nitrogen Determination of nitrate nitrogen by potentiometric method with ion selective electrode
  • PN C82055-21-1992 Test methods of pressed carbon products Determination of resistivity on electrodes
  • PN E05030-00-1990 Corrosion protection Electrochemical cathodic protection Requirements and tests
  • PN T01504-59-1987 Diodes Measuring methods Reverse recovery time t? and reverse recovery current i,r

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, Three-electrode test and two-electrode

  • JEDEC JESD211-2009 Zener and Voltage Regulator Diode Rating Verification and Characterization Testing
  • JEDEC JESD307-1992 Voltage Regulator Diode Noise Voltage Measurement
  • JEDEC JESD5-1982 Mesurement of Temperature Coefficient of Voltage Regulator Diodes
  • JEDEC JESD51-51-2012 Implementation of the Electrical Test Method for the Measurement of Real Thermal Resistance and Impedance of Light-Emitting Diodes with Exposed Cooling
  • JEDEC JESD24-11-1996 Power MOSFET Equivalent Series Gate Resistance Test Method Addendum to JEDEC JESD 24

工业和信息化部, Three-electrode test and two-electrode

  • XB/T 702-2022 Three-electrode system test method for testing the electrochemical properties of rare earth hydrogen storage alloy powder for metal hydride-nickel battery negative electrodes
  • SJ/T 11792-2022 Test method for conductivity of lithium-ion battery electrode materials
  • SJ/T 11793-2022 Test method for electrochemical properties of lithium-ion battery electrode materials
  • SJ/T 11795-2022 Test method for magnetic foreign matter content in lithium-ion battery electrode materials
  • SJ/T 11794-2022 Test method for free lithium in lithium-ion battery cathode materials

Professional Standard - Post and Telecommunication, Three-electrode test and two-electrode

邮电部, Three-electrode test and two-electrode

ES-UNE, Three-electrode test and two-electrode

  • UNE-EN 120001:1992 BDS: LIGHT EMITTING DIODES, LIGHT EMITTING DIODE ARRAYS, LIGHT EMITTING DIODE DISPLAYS WITHOUT INTERNAL LOGIC AND RESISTOR. (Endorsed by AENOR in September of 1996.)
  • UNE-EN 2593-001:2014 Aerospace series - Bases for 10 A electromagnetic plug-in relays, two and four poles double thrown - Part 001: Technical specification (Endorsed by AENOR in February of 2015.)
  • UNE-HD 148S2:1977 METHODS FOR THE MEASUREMENT OF DIRECT INTERELECTRODE CAPACITANCES OF ELECTRONIC TUBES AND VALVES. (Endorsed by AENOR in December of 1995.)

German Institute for Standardization, Three-electrode test and two-electrode

  • DIN IEC 62088:2002-09 Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures (IEC 62088:2001)
  • DIN EN 120001:1993 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992
  • DIN EN 120001:1993-06 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992
  • DIN 19262:2018 pH measurement - Plug socket and plug shielded for pH electrodes and pH combination electrodes
  • DIN 19262:2018-02 pH measurement - Plug socket and plug shielded for pH electrodes and pH combination electrodes
  • DIN 44402-16:1972 Measurements of the electrical properties of electronic tubes and valves; methods of measurement of spurious and unwanted electrode currents
  • DIN IEC 62088:2002 Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures (IEC 62088:2001)
  • DIN EN 2593-001:2015 Aerospace series - Bases for 10 A electromagnetic plug-in relays, two and four poles double thrown - Part 001: Technical specification; German and English version EN 2593-001:2014
  • DIN EN 2593-001:2015-03 Aerospace series - Bases for 10 A electromagnetic plug-in relays, two and four poles double thrown - Part 001: Technical specification; German and English version EN 2593-001:2014
  • DIN 46284:1972-11 Two- and three-pole socket terminal strips (appliance terminals) 380 V a.c. and 440 V d.c. for conductors up to 2,5 mm<(hoch)2>
  • DIN ISO 11929:2011 Determination of the characteristic limits (decision threshold, detection limit and limits of the confidence interval) for measurements of ionizing radiation - Fundamentals and application (ISO 11929:2010)
  • DIN 51919:2013-05 Testing of carbonaceous materials - Determination of the electrical resistivity of electrodes according to the current-voltage method - Solid materials
  • DIN 51919:1999 Testing of carbonaceous materials - Determination of the electrical resistivity of electrodes according to the current-voltage method; solid materials
  • DIN EN ISO 17475:2008-07 Corrosion of metals and alloys - Electrochemical test methods - Guidelines for conducting potentiostatic and potentiodynamic polarization measurements (ISO 17475:2005+Cor. 1:2006); German version EN ISO 17475:2008
  • DIN 51919:2013 Testing of carbonaceous materials - Determination of the electrical resistivity of electrodes according to the current-voltage method - Solid materials
  • DIN 44402-16:1972-03 Measurements of the electrical properties of electronic tubes and valves; methods of measurement of spurious and unwanted electrode currents

American Society for Testing and Materials (ASTM), Three-electrode test and two-electrode

  • ASTM G5-94(2004) Standard Reference Test Method for Making Potentiostatic and Potentiodynamic Anodic Polarization Measurements
  • ASTM G5-94(1999)e1 Standard Reference Test Method for Making Potentiostatic and Potentiodynamic Anodic Polarization Measurements
  • ASTM G5-94 Standard Reference Test Method for Making Potentiostatic and Potentiodynamic Anodic Polarization Measurements
  • ASTM G5-94(1999) Standard Reference Test Method for Making Potentiostatic and Potentiodynamic Anodic Polarization Measurements
  • ASTM G5-94(2011)e1 Standard Reference Test Method for Making Potentiostatic and Potentiodynamic Anodic Polarization Measurements
  • ASTM G5-14(2021) Standard Reference Test Method for Making Potentiodynamic Anodic Polarization Measurements
  • ASTM F769-00 Standard Test Method for Measuring Transistor and Diode Leakage Currents (Withdrawn 2006)
  • ASTM D6120-97(2002) Standard Test Method for Electrical Resistivity of Anode and Cathode Carbon Material at Room Temperature
  • ASTM D6120-97(2017)e1 Standard Test Method for Electrical Resistivity of Anode and Cathode Carbon Material at Room Temperature
  • ASTM G5-14e1 Standard Reference Test Method for Making Potentiodynamic Anodic Polarization Measurements
  • ASTM G5-14 Standard Reference Test Method for Making Potentiodynamic Anodic Polarization Measurements
  • ASTM G220-20 Standard Practice for Replacing Saturated Calomel Reference Electrode (SCE) for Measuring Electrode Potentials
  • ASTM G5-13e2 Standard Reference Test Method for Making Potentiodynamic Anodic Polarization Measurements
  • ASTM G5-13 Standard Reference Test Method for Making Potentiodynamic Anodic Polarization Measurements
  • ASTM D6120-97 Standard Test Method for Electrical Resistivity of Anode and Cathode Carbon Material at Room Temperature
  • ASTM D6120-97(2007) Standard Test Method for Electrical Resistivity of Anode and Cathode Carbon Material at Room Temperature
  • ASTM D6120-97(2012) Standard Test Method for Electrical Resistivity of Anode and Cathode Carbon Material at Room Temperature
  • ASTM G59-97e1 Standard Test Method for Conducting Potentiodynamic Polarization Resistance Measurements
  • ASTM G59-97(2009) Standard Test Method for Conducting Potentiodynamic Polarization Resistance Measurements
  • ASTM G5-12 Standard Reference Test Method for Making Potentiostatic and Potentiodynamic Anodic Polarization Measurements
  • ASTM G100-89(2004) Standard Test Method for Conducting Cyclic Galvanostaircase Polarization
  • ASTM G5-13e1 Standard Reference Test Method for Making Potentiodynamic Anodic Polarization Measurements
  • ASTM G59-97(2003) Standard Test Method for Conducting Potentiodynamic Polarization Resistance Measurements
  • ASTM G59-97(2020) Standard Test Method for Conducting Potentiodynamic Polarization Resistance Measurements
  • ASTM D6558-00A(2015)e1 Standard Test Method for Determination of TGA CO2 Reactivity of Baked Carbon Anodes and Cathode Blocks
  • ASTM D7066-04(2017) Standard Test Method for dimer/trimer of chlorotrifluoroethylene (S-316) Recoverable Oil and Grease and Nonpolar Material by Infrared Determination
  • ASTM G59-97(2014) Standard Test Method for Conducting Potentiodynamic Polarization Resistance Measurements
  • ASTM D7066-04 Standard Test Method for dimer/trimer of chlorotrifluoroethylene (S-316) Recoverable Oil and Grease and Nonpolar Material by Infrared Determination
  • ASTM G59-23 Standard Test Method for Conducting Potentiodynamic Polarization Resistance Measurements
  • ASTM G57-95a(2001) Standard Test Method for Field Measurement of Soil Resistivity Using the Wenner Four-Electrode Method
  • ASTM G57-95A Standard Test Method for Field Measurement of Soil Resistivity Using the Wenner Four-Electrode Method
  • ASTM D1816-12 Standard Test Method for Dielectric Breakdown Voltage of Insulating Liquids Using VDE Electrodes
  • ASTM D6745-06(2011) Standard Test Method for Linear Thermal Expansion of Electrode Carbons
  • ASTM D6745-01 Standard Test Method for Linear Thermal Expansion of Electrode Carbons
  • ASTM D6745-06 Standard Test Method for Linear Thermal Expansion of Electrode Carbons
  • ASTM D1816-12(2019) Standard Test Method for Dielectric Breakdown Voltage of Insulating Liquids Using VDE Electrodes
  • ASTM D877-00 Standard Test Method for Dielectric Breakdown Voltage of Insulating Liquids Using Disk Electrodes
  • ASTM D877-87(1995) Standard Test Method for Dielectric Breakdown Voltage of Insulating Liquids Using Disk Electrodes
  • ASTM C1025-91(2005) Standard Test Method for Modulus of Rupture in Bending of Electrode Graphite
  • ASTM C1025-15(2020) Standard Test Method for Modulus of Rupture in Bending of Electrode Graphite
  • ASTM F1113-87(2005)e1 Standard Test Method for Electrochemical Measurement of Diffusible Hydrogen in Steels (Barnacle Electrode)
  • ASTM G57-20 Standard Test Method for Measurement of Soil Resistivity Using the Wenner Four-Electrode Method
  • ASTM D7066-04e1 Standard Test Method for dimer/trimer of chlorotrifluoroethylene (S-316) Recoverable Oil and Grease and Nonpolar Material by Infrared Determination
  • ASTM D877-02e1 Standard Test Method for Dielectric Breakdown Voltage of Insulating Liquids Using Disk Electrodes
  • ASTM D877-02 Standard Test Method for Dielectric Breakdown Voltage of Insulating Liquids Using Disk Electrodes
  • ASTM D877/D877M-19 Standard Test Method for Dielectric Breakdown Voltage of Insulating Liquids Using Disk Electrodes
  • ASTM D877-02(2007) Standard Test Method for Dielectric Breakdown Voltage of Insulating Liquids Using Disk Electrodes
  • ASTM G57-06(2012) Standard Test Method for Field Measurement of Soil Resistivity Using the Wenner Four-Electrode Method
  • ASTM F1113-87(2011) Standard Test Method for Electrochemical Measurement of Diffusible Hydrogen in Steels (Barnacle Electrode)

International Electrotechnical Commission (IEC), Three-electrode test and two-electrode

  • IEC 60747-3-2:1986 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d
  • IEC TS 62916:2017 Photovoltaic modules - Bypass diode electrostatic discharge susceptibility testing
  • IEC 60747-5-11:2019 Semiconductor devices - Part 5-11: Optoelectronic devices - Light emitting diodes - Test method of radiative and nonradiative currents of light emitting diodes
  • IEC 60747-5-8:2019 Semiconductor devices - Part 5-8: Optoelectronic devices - Light emitting diodes - Test method of optoelectronic efficiencies of light emitting diodes
  • IEC 91/928/PAS:2010 Test methods for electronic circuit board for high-brightness LEDs
  • IEC 60747-5-16:2023 Semiconductor devices - Part 5-16: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
  • IEC 61243-3:2014/COR1:2015 Corrigendum 1 - Live working - Voltage detectors - Part 3: Two-pole low-voltage type
  • IEC 60747-5-7:2016 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
  • IEC 62561-5:2011 Lightning protection system components (LPSC) - Part 5: Requirements for earth electrode inspection housings and earth electrode seals
  • IEC 62561-5:2017 Lightning protection system components (LPSC) - Part 5: Requirements for earth electrode inspection housings and earth electrode seals
  • IEC 60747-2-2:1993 Semiconductor devices; discrete devices; part 2: rectifier diodes; section 2: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
  • IEC 60747-2-1:1989 Semiconductor devices; discrete devices; part 2: rectifier diodes; section one: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A
  • IEC TS 63109:2022 Photovoltaic (PV) modules and cells - Measurement of diode ideality factor by quantitative analysis of electroluminescence images

IEC - International Electrotechnical Commission, Three-electrode test and two-electrode

  • TS 62916-2017 Photovoltaic modules – Bypass diode electrostatic discharge susceptibility testing (Edition 1.0)

National Metrological Verification Regulations of the People's Republic of China, Three-electrode test and two-electrode

  • JJG(电子) 04026-1989 BJ2985 type crystal triode maintenance voltage tester verification regulations
  • JJG(电子) 04009-1987 BJ2983 type crystal triode forward-biased secondary breakdown tester trial verification regulations

United States Navy, Three-electrode test and two-electrode

Institute of Electrical and Electronics Engineers (IEEE), Three-electrode test and two-electrode

IEEE - The Institute of Electrical and Electronics Engineers@ Inc., Three-electrode test and two-electrode

SE-SIS, Three-electrode test and two-electrode

  • SIS SS-CECC 20001-1991 Blank detail specification: Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
  • SIS SS CECC 50013-1984 Blank detail specification: Current regulator and current reference diodes
  • SIS SS 06 11 01-1990 Welding electrodes — Wire electrodes and tubular wires for gas metal arc welding and metal arc welding of carbon steel, carbon-manganese alloyed steel, microalloyed steel and low-alloyed steel — Weld metal test specimens for all-weld-metal tests
  • SIS SS 436 01 13-1981 Poles of laminated wood for overhead power lines — Design and testing
  • SIS SS 06 11 02-1990 Welding electrodes — Wire electrodes and tubular wires for gas metal arc welding and metal arc welding of carbon steel, carbon-manganese alloyedsteel, microalloyed steel and low-alloyed steel — Welds and v/eld meta! bars for butt weld tests
  • SIS SS 428 91 05-1985 Portable single po/e voltage testers for 3,6 - 420 kV highest system voltage - Design and testing
  • SIS SS 428 91 05-1982 Portable single pole voltage testers for 3,6 - 420 kV h/g hes t system voltage - Design and testing
  • SIS SS CECC 32200-1988 Sectional specification: Fixed chip capacitors with metallized electrodes andpo/yethy/ene-terephtha/ate dielectric for direct current
  • SIS SS 424 10 32-1989 Trunking systems and service poles — Requirements and tests
  • SIS SS 428 91 06-1982 Portable two-pole voltage testers for 110-440 V a.c. and de. - Design and testing
  • SIS SS 06 17 10-1984 Welding electrodes - Test specimen for determination of weld metal composition
  • SIS SS CECC 32201-1988 Blank detail specification: Fixed chip capacitors with metallized electrodes andpo/yethylene-terephtha/ate dielectric for direct current

Lithuanian Standards Office , Three-electrode test and two-electrode

  • LST EN 120001-2001 Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
  • LST EN 61243-3-2010 Live working - Voltage detectors -- Part 3: Two-pole low-voltage type (IEC 61243-3:2009)

HU-MSZT, Three-electrode test and two-electrode

未注明发布机构, Three-electrode test and two-electrode

  • BS 7310:1990(2012) Specification for Ion - selective electrodes, reference electrodes, combination electrodes and ion - selective electrode meters for determination of ions in solution
  • BS 2586:1979(2012) Specification for Glass and reference electrodes for the measurement of pH

Danish Standards Foundation, Three-electrode test and two-electrode

  • DS/IEC 747-3-2:1987 Semiconductor devices. Discrete devices. Part 3: Signal (including switching) and regulator diodes. Section 2: Blank detail specification for voltage regulator diodes and voltage reference diodes, excluding temperature compensated precision refere di
  • DS/EN 61243-3:2010 Live working - Voltage detectors - Part 3: Two-pole low-voltage type
  • DS/ISO 4400:1989 Fluid power systems and components. Three-pin electrical plug connector. Characteristics and requirements
  • DS/IEC 747-2-1:1990 Semiconductor devices. Discrete devices. Part 2: Rectifier diodes. Section one: Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A

Association Francaise de Normalisation, Three-electrode test and two-electrode

  • NF C93-120-001*NF EN 120001:1992 Blank detail specification : light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
  • NF C86-815:1981 Harmonised system of quality assessment for electronic components. Blank detail specification : voltage regulator diodes and voltage reference diodes.
  • NF T90-008:1953 WATER TESTING. ELECTROMETRIC MEASUREMENT OF PH WITH THE GLASS ELECTRODE.
  • NF C86-815/A3:1983 Electronic Components Voltage regulator diodes and voltage reference diodes Manual of detail specifications within the scope of the French standards NF C 86-010 and NF C 86-815 (CECC 50 000 and CECC 50 000)
  • NF EN 60512-5-1:2002 Connecteurs pour équipements électroniques - Essais et mesures - Partie 5-1 : essais de courant limite : Essai 5a : échauffement
  • NF L58-334-001*NF EN 2593-001:2015 Aerospace series - Bases for 10 A eletromagnetic plug-in relays, two anf four poles double thrown - Part 001 : technical specification
  • NF M60-200:2010 Determination of the characteristic limits (decision threshold, detection limit and limits of the confidence interval) for measurements of ionizing radiation - Fundamentals and application.
  • NF EN ISO 2376:2019 Anodisation de l'aluminium et de ses alliages - Détermination de la tension électrique de claquage et tension de tenue

IPC - Association Connecting Electronics Industries, Three-electrode test and two-electrode

  • IPC TM-650 2.6.25B-2016 Conductive Anodic Filament (CAF) Resistance Test: X-Y Axis
  • IPC TM-650 2.6.25A-2012 Conductive Anodic Filament (CAF) Resistance Test: X-Y Axis
  • IPC 9691A CHINESE-2007 User Guide for the IPC-TM-650@ Method 2.6.25@ Conductive Anodic Filament (CAF) Resistance Test (Electrochemical Migration Testing)
  • IPC 9691A CD-2007 User Guide for the IPC-TM-650@ Method 2.6.25@ Conductive Anodic Filament (CAF) Resistance Test (Electrochemical Migration Testing)
  • IPC 9691A CHINESE CD-2007 User Guide for the IPC-TM-650@ Method 2.6.25@ Conductive Anodic Filament (CAF) Resistance Test (Electrochemical Migration Testing)

国家能源局, Three-electrode test and two-electrode

  • NB/T 42082-2016 All-vanadium redox flow battery electrode testing method
  • NB/T 42146-2018 Test methods for zinc-bromine flow battery electrodes, separators, and electrolytes

Japanese Industrial Standards Committee (JISC), Three-electrode test and two-electrode

  • JIS C 5991:1997 Measuring methods of photodiodes for fiber optic transmission
  • JIS Z 8752:1989 Measuring methods of low pressures by hot cathode and cold cathode ionization gauges
  • JIS H 8687:2013 Anodizing of aluminium and its alloys.Determination of electric strength

Group Standards of the People's Republic of China, Three-electrode test and two-electrode

  • T/CVIA 59-2016 Organic Light Emitting Diode (OLED) TV Measurement Methods
  • T/CVIA 11-2016 Organic Light Emitting Diode (OLED) TV Measurement Methods
  • T/CSA 048-2019 Measurement of Electrical and Photometric Characteristics for General Lighting LEDs under Different Currents / Temperatures
  • T/CESA 1054-2018 Test methods for Porous carbons for electrodes of supercapacitors
  • T/CAAMTB 12-2020 Proton exchange membrane fuel cell membrane electrode test method
  • T/CSTM 00461-2022 Test method for electrode peel strength of crystalline silicon PV cells
  • T/GDBIA 06-2023 Specification for safety testing of ternary cathode materials for lithium-ion batteries
  • T/CEEIA 577-2022 Electrode for iron chromium flow battery technical requirements and test
  • T/CEC 131.11-2020 Secondary utilization of lead-acid batteries Part 11: Technical specifications for plate failure detection - potential difference method

European Standard for Electrical and Electronic Components, Three-electrode test and two-electrode

  • EN 120001:1992 Blank detail specification; light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor

Professional Standard - Non-ferrous Metal, Three-electrode test and two-electrode

  • YS/T 411-1998 The measuring method of CO2 reaction of anode carbon,anode paste for aluminium electrolysis

TR-TSE, Three-electrode test and two-electrode

  • TS 2441-1976 MEASUREMENTS OF THE ELECTRICAL PROPERTIES OF ELECTRONIC TUBES AND VALVES PART 1 : MEASUREMENT OF ELECTRODE CURRENT
  • TS 2455-1976 Measurements Of The Electrical Properties Of ElectronicTubes And Valves Part 15: Methods Of Measurement Of Spurious And ünwanted Electrode Currents
  • TS 2449-1976 MEASUREMENTS OF THE ELECTRICAL PROPERTIES OF ELECTRONIC TUBES AND VALVES PART 9 : METHODS OF MEASURING THE CATHODE-INTERFACE IMPEDANCE
  • TS 2454-1976 MEASUREMENTS OF THE ELECTRICAL PROPERTIES OF ELECTRONIC TUBES AND VALVES PART 14 : METHODS OF MEASUREMENT OF RADAR AND OSCILLOSCOPE CATHODERAY TUBES
  • TS 2642-1977 MEASUREMENTS OF THE ELECTRICAL PROPERTIES OF ELECTRONIC TUBES AND VALVES PART 22 : METHODS OF MEASUREMENT FOR COLD CATHODE COUNTING AND INDICATOR TUBES
  • TS 2453-1976 MEASUREMENTS OF THE ELECTRICAL PROPERTIES OF ELECTRONIC TUBES AND VALVES PART 13 : METHODS OF MEASUREMENT OF EMISSION CORRENT FROM HOT CATHODES FOR HIGH- VACUUM ELECTRONIC TUBES AND VALVES
  • TS 2448-1976 Measurements of The Electr?cal Propert?es of Electronic Tubes And Valves Part 8: Measurement of Cathode Heatmg Time And Heater Warm - Up Time
  • TS 2452-1976 MEASUBEMENTS OF THE ELECTRICAL PROPERTIES OF EIJECTRONIC TUBES AND VALVES PART 12 : METHODS OF MEASURING ELECTRODE RESISTANCE, TRANSCONDUCTANE, AMPLIFICATION FACTOR, CONVERSION RESISTANCE AND CONVERSION TRANSCONDUCTANCE

Institute of Interconnecting and Packaging Electronic Circuits (IPC), Three-electrode test and two-electrode

  • IPC TM-650 2.6.25-2003 Conductive Anodic Filament (CAF) Resistance Test: X-Y Axis
  • IPC 9691-2005 User Guide for the IPC-TM-650, Method 2.6.25, Conductive Anodic Filament (CAF) Resistance Test (Electrochemical Migration Testing)

AENOR, Three-electrode test and two-electrode

Guangdong Provincial Standard of the People's Republic of China, Three-electrode test and two-electrode

U.S. Military Regulations and Norms, Three-electrode test and two-electrode

Professional Standard - Machinery, Three-electrode test and two-electrode

  • JB/T 6307.5-1994 Power Semiconductor Module Test Methods Bipolar Transistors Single-Phase Bridge and Three-Phase Bridge
  • JB/T 7704.6-1995 Test method for electroplating solution Determination of polarization curve
  • JB/T 6307.4-1992 Test method for power semiconductor module Arm and pair of arms of bipolar transistor

IECQ - IEC: Quality Assessment System for Electronic Components, Three-electrode test and two-electrode

  • QC 750105-1986 Semiconductor Devices; Discrete Devices Part 3: Signal (Including Switching) and Regulator Diodes Section Two-Blank Detail Specification for Voltage-Regulator Diodes and Voltage-Reference Diodes@ Exluding Temperature-Compensated Precision Ref. Diodes (IEC

CENELEC - European Committee for Electrotechnical Standardization, Three-electrode test and two-electrode

  • EN 150013:1991 Blank Detail Specification: Current Regulator and Current Reference Diodes

TH-TISI, Three-electrode test and two-electrode

  • TIS 1971-2000 Semiconductor devices discrete devices part 3:signal (including switching)and regulator diodes section two-blank detail specification for voltage-regulator diodes and voltage-reference diodes,excluding temperature-compensated precision reference diodes
  • TIS 1596-1999 Semiconductor devices.discrete devices.part 2: rectifier diodes section 2: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 a

American National Standards Institute (ANSI), Three-electrode test and two-electrode

  • ANSI/IEEE C62.37:1996 Standard Test Specification for Thyristor Diode Surge Protective Devices
  • ANSI/EIA 307:1992 Voltage Regulator Diode Noise Voltage Measurement / Note: Approved 2002-04-00.
  • ANSI/ASTM D7066:2004 Test Method for Dimer/Trimer of Chlorotrifluoroethylene (s-316) Recoverable Oil and Grease and Nonpolar Material by Infrared Determination

YU-JUS, Three-electrode test and two-electrode

  • JUS N.R1.115-1977 Electronic tubes. Measurements of the electrical properties. Methods of measurement of spurious and unwanted electrode currents

GB-REG, Three-electrode test and two-electrode

Professional Standard-Ships, Three-electrode test and two-electrode

  • CB/T 3794-2014 Test methods for the properties of piezoelectric ceramics.Test for electrode joint strength

GOSTR, Three-electrode test and two-electrode

  • GOST R IEC 62561.5-2014 Lightning protection system components. Part 5. Requirements for earth electrode inspection housings and earth electrode seals

Professional Standard - Energy, Three-electrode test and two-electrode

  • NB/T 42007-2013 Test method of bipolar plate for vanadium redox flow battery

Military Standard of the People's Republic of China-General Armament Department, Three-electrode test and two-electrode

  • GJB 7675-2012 Test methods for microwave tube cathodes and components
  • GJB 33/006-1989 Blank detailed specification for voltage regulation and voltage reference diodes for semiconductor discrete devices

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, Three-electrode test and two-electrode

  • GB/T 33762-2017 Method of measurement for display performance of organic light-emitting diode(OLED) television

PT-IPQ, Three-electrode test and two-electrode

AASHTO - American Association of State Highway and Transportation Officials, Three-electrode test and two-electrode

  • T 373M/T 373-2017 Standard Method of Test for Comparative Qualitative Corrosion Characterization of Steel Bars Used for Concrete Reinforcement (Linear Polarization Resistance and Potentiodynamic Polarization Tests)

International Organization for Standardization (ISO), Three-electrode test and two-electrode

  • ISO 9006:1994 Uranium metal and uranium dioxide powder and pellets - Determination of nitrogen content - Method using ammonia-sensing electrode
  • ISO 11713:2000 Carbonaceous materials used in the production of aluminium - Cathode blocks and baked anodes - Determination of electrical resistivity at ambient temperature
  • ISO 11929-4:2022 Determination of the characteristic limits (decision threshold, detection limit and limits of the coverage interval) for measurements of ionizing radiation — Fundamentals and application — Part 4: Gui

Aerospace, Security and Defence Industries Association of Europe (ASD), Three-electrode test and two-electrode

  • ASD-STAN PREN 2593-001-2010 Aerospace series Bases for 10 A electromagnetic plug-in relays, two and four poles double throw Part 001: Technical specification (Edition P 1)

ASD-STAN - Aerospace and Defence Industries Association of Europe - Standardization, Three-electrode test and two-electrode

  • PREN 2593-001-2010 Aerospace series Bases for 10 A electromagnetic plug-in relays@ two and four poles double throw Part 001: Technical specification (Edition P 1)

国家市场监督管理总局、中国国家标准化管理委员会, Three-electrode test and two-electrode

  • GB/T 24488-2021 Test method for electrochemical properties of magnesium alloys sacrificial anode

Indonesia Standards, Three-electrode test and two-electrode

  • SNI 05-4006-1996 Eddy current examination method for installed nonferromagnetic heat exchanger tubing.

Professional Standard - Ocean, Three-electrode test and two-electrode

  • HY/T 192-2015 Test method of potentiodynamic polarization resistance of metallic materials in seawater

KR-KS, Three-electrode test and two-electrode

  • KS D ISO 17475-2017 Corrosion of metals and alloys-Electrochemical test methods-Guidelines for conducting potentiostatic and potentiodynamic polarization measurements

IN-BIS, Three-electrode test and two-electrode

National Association of Corrosion Engineers (NACE), Three-electrode test and two-electrode

  • NACE TM0190-2012 Impressed Current Laboratory Testing of Aluminum and Zinc Alloy Anodes (Item No. 21221)

ECIA - Electronic Components Industry Association, Three-electrode test and two-electrode

  • 580A000-1992 Sectional Specification for Fixed Chip Capacitors with Metallized Electrodes and Polyethylene-Terephthalate Dielectric for Use in Electronic Equipment

GM North America, Three-electrode test and two-electrode

The American Road & Transportation Builders Association, Three-electrode test and two-electrode

  • AASHTO T 200-1979 Standard Method of Test for pH of Aqueous Solutions with the Glass Electrode

European Committee for Standardization (CEN), Three-electrode test and two-electrode

  • EN 4728:2015 Aerospace series - Circuit breakers@ single and three poles dummies - Product standard




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