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flow field effect
flow field effect, Total:11 items.
In the international standard classification, flow field effect involves: Integrated circuits. Microelectronics, Electricity. Magnetism. Electrical and magnetic measurements, Semiconductor devices.
Defense Logistics Agency, flow field effect
PL-PKN, flow field effect
- PN T01505 ArkusZ06-1974 Field-eftec? transis?ors Measuring method Ga?? current Icdo
- PN T01505-04-1987 Field-effect transistors Measuring method Gate cut-off current Iaso and gate leakage current Igss
- PN T01505-03-1987 Field-effect transistors Measuring method Drain current, at a specified gate-source voltage Idsx and drain current, with gate short-circuited to source. Idss
International Electrotechnical Commission (IEC), flow field effect
- IEC TS 62607-6-16:2022 Nanomanufacturing - Key control characteristics - Part 6-16: Two-dimensional materials - Carrier concentration: Field effect transistor method
American Society for Testing and Materials (ASTM), flow field effect
- ASTM F616M-96 Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)
- ASTM F616M-96(2003) Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)
RU-GOST R, flow field effect
- GOST 20398.6-1974 Field-effect transistors. Gate leakage current measurement technique
- GOST 20398.8-1974 Field-effect transistors. Drain current for V(Gs)=0 measurement technique
- GOST 20398.12-1980 Field-effect transistors. Drain residual current measurement technique
YU-JUS, flow field effect
- JUS N.R1.353-1979 Letter symbohfor semiconductor devices. Bipolar andfield-effect transistors.