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stable semimetal
stable semimetal, Total:499 items.
In the international standard classification, stable semimetal involves: Integrated circuits. Microelectronics, Semiconductor devices, Products of non-ferrous metals, Materials for aerospace construction, Semiconducting materials, Fasteners, Non-ferrous metals, Testing of metals, Chipless working equipment, Iron and steel products, Powder metallurgy, Machine tools, Equipment for the chemical industry, Linear and angular measurements, Barrels. Drums. Canisters, Corrosion of metals, Components for electrical equipment, Cutting tools, Environmental protection, Accident and disaster control, Ceramics, Surface treatment and coating, Coatings and related processes used in aerospace industry, Elements of buildings, Electronic components in general, Insulating materials, Characteristics and design of machines, apparatus, equipment, Power transmission and distribution networks, Furniture, Resistors, Diagnostic, maintenance and test equipment, Tyres, Vocabularies, Welding, brazing and soldering, Occupational safety. Industrial hygiene, Fluid power systems, Audio, video and audiovisual engineering, Electricity. Magnetism. Electrical and magnetic measurements, Safety of machinery, Bearings, Fibre optic communications, Manufacturing forming processes, Medical equipment.
RO-ASRO, stable semimetal
- STAS 11576-1983 FLUXES FOR SOLDERING OF METALS Classification
- STAS 9229-1980 NON-FERROUS METALS AND ALLOYS SNAP HEAD RIVETS
- STAS 8082-1988 METALLIC HARDWARE FOR FURNITURE SEMI-MORTICE LOCKS WITH SAFETY CYLINDER Dimensions
- STAS 9553-1974 SEMIFINISHED PRODUCTS AND PRODUCTS OF NON-FERROUS METALS AND ALLOYS Terminology
- STAS 8640/4-1987 Files for non-ferrous metals working HALF-ROUND FILE Dimesnions
- STAS 6833-1979 Testing of metals NOTCH IMPACT TEST AT LOW TEMPERATURES
Defense Logistics Agency, stable semimetal
- DLA SMD-5962-95656 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, OCTAL D FLIP-FLOP WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96864-1996 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-89492-1991 MICROCIRCUITS, DIGITAL, HIGH-SPEED CMOS, DUAL, RETRIGGERABLE MONOSTABLE MULTIVIBRATOR, MONOLITHIC SILICON
- DLA SMD-5962-96613 REV B-1997 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, GATED J-K MASTER-SLAVE FLIP-FLOP, MONOLITHIC SILICON
- DLA SMD-5962-96590 REV C-2006 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, OCTAL D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96591 REV B-2006 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, OCTAL D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-97574 REV C-2003 MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, OCTAL EDGE-TRIGGERED D-TYPE FLIP FLOP WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-97576 REV B-2003 MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, OCTAL EDGE-TRIGGERED D-TYPE FLIP FLOP WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96605 REV C-2003 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, HEX D-TYPE FLIP-FLOP, MONOLITHIC SILICON
- DLA SMD-5962-96606 REV B-1997 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, QUAD D-TYPE FLIP-FLOP, MONOLITHIC SILICON
- DLA SMD-5962-96622 REV C-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, DUAL D-TYPE FLIP-FLOP, MONOLITHIC SILICON
- DLA SMD-5962-96629 REV C-2003 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, DUAL J-K MASTER SLAVE FLIP-FLOP, MONOLITHIC SILICON
- DLA SMD-5962-87694 REV E-2005 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-86814 REV B-2004 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, OCTAL D-TYPE FLIP-FLOP, MONOLITHIC SILICON
- DLA SMD-5962-86815 REV B-2004 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS OCTAL D-TYPE FLIP-FLOP, MONOLITHIC SILICON
- DLA SMD-5962-96578 REV B-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, OCTAL D FLIP-FLOP WITH CLEAR, MONOLITHIC SILICON
- DLA SMD-5962-95784 REV B-2004 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, DUAL J-K FLIP-FLOP WITH SET AND RESET, MONOLITHIC SILICON
- DLA SMD-5962-95782 REV E-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, DUAL D FLIP-FLOP WITH SET AND RESET, MONOLITHIC SILICON
- DLA SMD-5962-95662 REV B-1998 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, OCTAL D FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96773 REV C-2005 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96865 REV B-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-95793 REV C-2004 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, OCTAL D-TYPE POSITIVE EDGE-TRIGGERED FLIP-FLOP WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-95835-1995 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL TRANSPARENT D-TYPE LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-95791 REV C-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, OCTAL D FLIP-FLOP WITH MASTER RESET, MONOLITHIC SILICON
- DLA SMD-5962-95802 REV A-1998 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, DUAL J-K FLIP-FLOP WITH SET AND RESET, MONOLITHIC SILICON
- DLA KKK-L-370 D NOTICE 3-2001 LINING, FRICTION, (CLUTCH AND BRAKE, METALLIC, METAL-CERAMIC AND SEMI-METALLIC)
- DLA KKK-L-370 D-1988 LINING, FRICTION, (CLUTCH AND BRAKE, METALLIC, METAL-CERAMIC AND SEMI-METALLIC)
- DLA SMD-5962-95831 REV D-2007 MICROCIRCUIT, DIGITAL, ADVANCED BICMOS, 3.3 VOLT OCTAL TRANSPARENT D-TYPE LATCH WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-95832 REV C-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3- VOLT OCTAL EDGE-TRIGGERED D-TYPE FLIP FLOP WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-91532 REV C-2004 MICROCIRCUIT, LINEAR, CMOS, DUAL, LOW POWER, VOLTAGE COMPARATOR, MONOLITHIC SILICON
- DLA SMD-5962-87626 REV B-2005 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, HEX D FLIP-FLOP WITH MASTER RESET, MONOLITHIC SILICON
- DLA SMD-5962-96540 REV E-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, DUAL J-K FLIP-FLOP WITH CLEAR AND PRESET, MONOLITHIC SILICON
- DLA SMD-5962-96861 REV A-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, DUAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-95748 REV C-1999 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, OCTAL D-TYPE POSITIVE EDGE-TRIGGERED FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-95842 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 18-BIT BUS-INTERFACE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-95764 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, OCTAL D-TYPE FLIP-FLOP, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96665 REV D-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, HEX VOLTAGE LEVEL SHIFTER FOR TTL-TO-CMOS OR CMOS-TO- CMOS OPERATION, MONOLITHIC SILICON
- DLA SMD-5962-85507 REV E-2003 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, OCTAL D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-95758 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-88740 REV D-2007 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 STATIC RAM, MONOLITHIC SILICON
- DLA SMD-5962-89546-1989 MICROCIRCUITS, DIGITAL, CMOS, PROGRAMMABLE SYNCHRONOUS STATE MACHINE, MONOLITHIC SILICON
- DLA SMD-5962-96714 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, DUAL J-K FLIP FLOP WITH SET AND RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-95763 REV E-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, DUAL D FLIP-FLOP WITH SET AND RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-88595 REV A-1989 MICROCIRCUITS, DIGITAL, NMOS, 256 X 4 STATIC RAM (SRAM) MONOLITHIC SILICON
- DLA SMD-5962-86012 REV C-2005 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, 7-STAGE RIPPLE COUNTER, MONOLITHC SILICON
- DLA SMD-5962-87631 REV C-2005 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL D-TYPE FLIP-FLOP, TTL COMPATIBLE INPUTS, THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-95647 REV B-1998 MICROCIRCUIT, DIGITAL, ADVANCED BICMOS, 3.3 V 16-BIT EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH BUS HOLD, THREE-STATE OUTPUTS, AND TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96694 REV A-1996 MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOS, 4K X 1 STATIC RAM, MONOLITHIC SILICON
- DLA SMD-5962-96695 REV A-1996 MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOS, 1K X 4 STATIC RAM, MONOLITHIC SILICON
- DLA SMD-5962-95738 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, DUAL J-K FLIP FLOP WITH SET AND RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-95769 REV C-1999 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, DUAL J-K FLIP-FLOP WITH SET AND RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96614 REV C-2003 MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, DUAL MONOSTABLE MULTIVIBRATOR, MONOLITHIC SILICON
- DLA SMD-5962-96635 REV C-2003 MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, LOW-POWER MONOSTABLE/ASTABLE MULTIVIBRATOR, MONOLITHIC SILICON
- DLA SMD-5962-04213-2004 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-91603 REV A-1998 MICROCIRCUITS, DIGITAL, ADVANCED CMOS, 4-STAGE SYNCHRONOUS BIDIRECTIONAL COUNTER, MONOLITHIC SILICON
- DLA SMD-5962-92153 REV M-2006 MICROCIRCUIT, DIGITAL, CMOS, 32K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
- DLA SMD-5962-96617 REV B-1997 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, 18-STAGE STATIC REGISTER, MONOLITHIC SILICON
- DLA DSCC-DWG-85006 REV E-2008 RELAY, SOLID STATE, HERMETICALLY SEALED, OPTICALLY ISOLATED, 1.0 AMPERE, 60 V DC, SPST (N.0.), CMOS INPUT
- DLA A-A-52035 VALID NOTICE 2-2007 PROTRACTOR, ONE ARM: SEMICIRCULAR (CORROSION-RESISTANT ALLOY, WITH CASE)
- DLA A-A-52035 VALID NOTICE 1-2001 PROTRACTOR, ONE ARM: SEMICIRCULAR (CORROSION-RESISTANT ALLOY, WITH CASE)
- DLA A-A-52035-1991 PROTRACTOR, ONE ARM: SEMICIRCULAR (CORROSION-RESISTANT ALLOY, WITH CASE)
- DLA SMD-5962-87676 REV A-1988 MICROCIRCUITS, DIGITAL, NMOS, 64K X 4 DRAM, MONOLITHIC SILICON
- DLA SMD-5962-88594 REV C-2006 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 4 STATIC RAM (SRAM), MONOLITHIC SILICON
- DLA SMD-5962-96728-1995 MICROCIRCUIT, DIGITAL, CMOS, STATIC 16-BIT MICROPROCESSOR, MONOLITHIC SILICON
- DLA SMD-5962-96702 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, DUAL PRECISION MONOSTABLE MULTIVIBRATOR, MONOLITHIC SILICON
- DLA SMD-5962-82007 REV C-2006 MICROCIRCUIT, MEMORY, DIGITAL, NMOS 16K (16,384 X 1) BIT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
- DLA SMD-5962-86081 REV B-1996 MICROCIRCUIT, DIGITAL, NMOS, 4096 X 4 BIT STATIC RAM, MONOLITHIC SILICON
- DLA SMD-5962-89524 REV B-2006 MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 4 SRAM WITH OE, MONOLITHIC SILICON
- DLA SMD-5962-96623 REV C-2003 MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, 8-STAGE STATIC SHIFT REGISTER, MONOLITHIC SILICON
- DLA SMD-5962-96647 REV B-1997 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, 64-STAGE STATIC SHIFT REGISTER, MONOLITHIC SILICON
- DLA SMD-5962-96818 REV A-2003 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96862-1996 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96868-1996 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96877 REV C-2006 MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS, 128K X 8 STATIC RAM, MONOLITHIC SILICON
- DLA SMD-5962-87656 REV B-2006 MICROCIRCUIT, DIGITAL, FAST CMOS, OCTAL D-TYPE FLIP-FLOP WITH CLEAR, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-94672 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, SCAN TEST DEVICE WITH 18-BIT UNIVERSAL BUS TRANSCEIVER, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-82010 REV G-2005 MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 65,536 X 1 BIT DYNAMIC RAM, MONOLITHIC SILICON
- DLA SMD-5962-92154 REV A-2001 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 1 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
- DLA SMD-5962-88639 REV C-2006 MICROCIRCUIT, DIGITAL, FAST CMOS, OCTAL TRANSPARENT LATCH WITH THREESTATE OUTPUTS, TTL COMPATIBLE, MONOLITHIC SILICON
- DLA SMD-5962-90847 REV F-2004 MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1 MEG X 4 DRAM, MONOLITHIC SILICON
- DLA SMD-5962-96766 REV A-1996 MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS, 256 X 8 STATIC RAM, MONOLITHIC SILICON
- DLA SMD-5962-97543 REV C-2003 MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-87628 REV D-2006 MICROCIRCUIT, DIGITAL, FAST CMOS, OCTAL NONINVERTING D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS AND TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-90741 REV B-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVERS/MOS DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-90744 REV B-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, 10-BIT BUS/MOS MEMORY DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-92179 REV A-2006 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-87627 REV C-2006 MICROCIRCUIT, DIGITAL, FAST CMOS, OCTAL D FLIP-FLOP WITH CLOCK ENABLE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-85124 REV E-2002 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, 3-STATE DATA SELECTOR/MULTIPLEXER, MONOLITHIC SILICON
- DLA SMD-5962-85128 REV D-2003 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, OCTAL D- TYPE LATCH WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-85152 REV F-2006 MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 256K X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM), MONOLITHIC SILICON
- DLA SMD-5962-91606 REV A-2006 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 10-BIT D FLIP-FLOP WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-91612 REV B-2006 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
- DLA SMD-5962-92078 REV H-2001 MICROCIRCUIT, HYBRID, MEMORY, DIGITAL, STATIC RANDOM ACCESS MEMORY, CMOS, 512K X 8-BIT
- DLA SMD-5962-87758 REV G-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL BIDIRECTIONAL TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-92132 REV D-2006 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 4 DRAM, MONOLITHIC SILICON
- DLA SMD-5962-88544 REV C-2006 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 1 STATIC RAM (SRAM) LOW POWER, MONOLITHIC SILICON
- DLA SMD-5962-88545 REV C-2007 MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 64K X 4 SRAM (LOW POWER), MONOLITHIC SILICON
- DLA SMD-5962-88610 REV F-2007 MICROCIRCUIT, MEMORY, DIGITAL, CMOS 2K X 16 DUAL PORT SRAM, MONOLITHIC SILICON
- DLA SMD-5962-88703 REV B-2000 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT MULTIPLEXER, WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-86825 REV B-2003 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, QUAD D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-89513 REV B-2006 MICROCIRCUIT, DIGITAL, FAST CMOS, OCTAL D REGISTER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE, MONOLITHIC SILICON
- DLA SMD-5962-96598 REV C-1997 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, 32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER, MONOLITHIC SILICON
- DLA SMD-5962-96850 REV A-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, OCTAL BUFFER/DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96857 REV A-2005 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, OCTAL BUFFER/DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-95820 REV A-2007 MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS STATIC CLOCK CONTROLLER/GENERATOR, MONOLITHIC SILICON
- DLA SMD-5962-81039 REV G-2006 MICROCIRCUIT, MEMORY, DIGITAL, NMOS 16K (2048 X 8) BIT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
- DLA SMD-5962-91555 REV B-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUS TRANSCEIVER AND REGISTER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-91593-1993 MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, 16K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
- DLA SMD-5962-91594-1994 MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, 8K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
- DLA SMD-5962-87692 REV B-1999 MICROCIRCUITS, DIGITAL, ADVANCED CMOS, 8-INPUT MULTIPLEXER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-87806 REV C-2005 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, 8-BIT UNIVERSAL SHIFT REGISTER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-86813 REV B-2003 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, OCTAL D-TYPE LATCH WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-90858-1991 MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 16 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
- DLA SMD-5962-86875 REV D-2006 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
- DLA SMD-5962-96668 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, DUAL 64-STAGE STATIC SHIFT REGISTER, MONOLITHIC SILICON
- DLA SMD-5962-96704 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, DUAL J-K FLIP FLOP WITH SET AND RESET, MONOLITHIC SILICON
- DLA SMD-5962-96711 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, ERROR DETECTION AND CORRECTION UNIT WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96797 REV C-2004 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, NON-INVERTING OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-87725 REV B-2006 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, OCTAL D-TYPE FLIP-FLOP WITH MASTER RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-90701 REV A-2006 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, DUAL J-K FLIP-FLOP WITH SET AND RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-87525 REV F-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL D-TYPE FLIP-FLOP WITH PRESET AND CLEAR, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-05212 REV B-2007 MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, 16-BIT D-TYPE FLIP-FLOP WITH BUS HOLD, SERIES OUTPUT RESISTORS, AND THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-90939 REV C-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVER/MOS DRIVER WITH INVERTED THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-87555 REV F-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL D-TYPE TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-87693 REV A-2005 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL 4-INPUT MULTIPLEXER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-88611 REV A-1991 MICROCIRCUITS, DIGITAL, CMOS 4K X 4 SRAM WITH SEPARATE I/O, MONOLITHIC SILICON
- DLA SMD-5962-86705 REV F-2006 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 4 STATIC RAM, MONOLITHIC SILICON
- DLA SMD-5962-88705 REV A-2003 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 10-BIT D-TYPE FLIP-FLOP WITH THREESTATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-88754 REV B-2000 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 8-INPUT UNIVERSAL SHIFT/STORAGE REGISTER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96588 REV B-2006 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96589 REV B-2006 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96705 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, NONINVERTING QUAD BUFFER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96724 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96807-1996 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, OCTAL BUFFER/DRIVER WITH INVERTING THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96866-1996 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, OCTAL TRANSPARENT D-TYPE LATCH WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA MIL-DTL-26499 E-2006 HOSE ASSEMBLY, METAL, FLEXIBLE, BREATHING OXYGEN
- DLA SMD-5962-91508 REV C-2007 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
- DLA SMD-5962-91604 REV A-2006 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD 2-INPUT MULTIPLEXER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-87592 REV B-2000 MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 1K X 4 HIGH-SPEED STATIC RAM, MONOLITHIC SILICON
- DLA SMD-5962-87809 REV B-2006 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, OCTAL INVERTING BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-95646 REV A-1996 MICROCIRCUIT, DIGITAL, ADVANCED BICMOS, 20-BIT BUS-INTERFACE D-TYPE LATCHES WITH TRI-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-95655 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-88706 REV D-2005 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL BUFFER/LINE DRIVER, WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-90720 REV A-1992 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY, 8-BIT BUS INTERFACE D-TYPE LATCHES WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-86859 REV B-2006 MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 4 SRAM, MONOLITHIC SILICON
- DLA SMD-5962-87513 REV C-2006 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 1 AND 1K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
- DLA SMD-5962-95845 REV C-2002 MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 32K X 8 STATIC RAM, MONOLITHIC SILICON
- DLA SMD-5962-96819 REV A-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96890 REV A-2003 MICROCIRCUITS, DIGITAL, LOW VOLTAGE CMOS, 18-BIT GTL/LVT UNIVERSAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-97542 REV C-2003 MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, OCTAL BUFFER/DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-96736-1996 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, HIGH SPEED 8-BIT BIDIRECTIONAL CMOS/TTL INTERFACE LEVEL CONVERTER, MONOLITHIC SILICON
TR-TSE, stable semimetal
- TS 925-1971 FRICTION L?NINGS FOR CLUTCHES (METALLIC, SEMIMETALLIC AND METAL -CERAMIC)
BR-ABNT, stable semimetal
International Electrotechnical Commission (IEC), stable semimetal
- IEC 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
- IEC 60749-36:2003 Semiconductor devices - Mechanical and climatic test methods - Part 36: Acceleration, steady state
- IEC 62373-1:2020 Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
- IEC 62418:2010 Semiconductor devices - Metallization stress void test
- IEC 63275-1:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
- IEC 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
- IEC 60749-4:2002 Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
- IEC 60749-4:2017 Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
- IEC 60749-5:2003 Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test
- IEC 60749-5:2017 Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test
HU-MSZT, stable semimetal
Professional Standard - Aerospace, stable semimetal
- QJ 967-1986 Test method for medium-temperature steady-state heat transfer characteristics of rigid non-metallic insulation materials
- QJ 966-1986 Test method for low-temperature steady-state heat transfer characteristics of rigid non-metallic insulation materials
国家市场监督管理总局、中国国家标准化管理委员会, stable semimetal
- GB/T 39859-2021 Gallium-based liquid metal
- GB/T 24522-2020 Metallic materials—Method of test for the determination of resistance to stable crack extension using specimens of low constraint
- GB/T 40809-2021 Casting aluminum alloys—Process specification for semisolid rheo-diecasting forming
Group Standards of the People's Republic of China, stable semimetal
- T/IAWBS 009-2019 High Voltage Bias Steady-state Temperature Humidity Test for Power Semiconductor Devices
- T/GDC 5-2019 General specifications for semi-solid aluminum alloy die castings
- T/CECA 35-2019 Metal oxide semiconductor gas sensor
- T/TMAC 064-2023 Technical specifications for ecological environment protection and restoration of metal and non-metal mines
- T/GRM 037-2022 Technical specification for stable layer construction of heavy metal tailings reservoir
- T/CNS 16-2020 Determination of corrosion loss of metals and alloys in liquid lead alloys
- T/CASAS 016-2022 Transient dual test method for the measurement of the thermal resistance junction to case of silicon carbide metal-oxide-semiconductor field-effect-transistor(SiC MOSFET)
- T/BFTA 005-2023 Technical specification for Eco-products Certification- Metal Furniture
- T/CASME 679-2023 Technical requirements for edge welded dynamic metal bellows
- T/CASAS 017-2021 Terminology of micro-nano metallic sintering technology for wide-bandgap semiconductor
- T/GDGM 0007-2019 Green Design Product Evaluation Technical Specifications for Aluminum Alloy Semi-Solid Die Castings
- T/ZMDS 60001-2022 Liquid metal lubricate used in high speed sliding bearings of CT tubes
- T/ZSA 91-2021 General specifications for liquid metal desktop printing equipments
- T/ACEF 065-2023 Technical guidelines for ecological risk assessment of heavy metal contaminated soil
Association Francaise de Normalisation, stable semimetal
- NF C96-051*NF EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
- NF EN 62373:2006 Essai de stabilité de température en polarisation pour transistors à effet de champ métal-oxyde-semiconducteur (MOSFET)
- NF A57-110*NF EN 577:1995 Aluminium and aluminium alloys. Liquid metal. Specifications.
- NF EN 577:1995 Aluminium et alliages d'aluminium - Métal liquide - Spécifications.
- NF EN 62374-1:2011 Dispositifs à semiconducteurs - Partie 1 : essai de rupture diélectrique en fonction du temps (TDDB) pour les couches intermétalliques
- NF C96-022-36*NF EN 60749-36:2003 Semiconductor devices - Mechanical and climatic test methods - Part 36 : acceleration steady state
- NF A55-401:1982 NON FERROUS METALS. COLD ROLLED SEMI-FINISHED PRODUCTS MADE OF LEAD. CHARACTERISTICS.
- NF P24-351/A1:2003 Metal joinery - Windows, curtain walling, metal frame panels - Protection against corrosion and conservation of surface conditions
- NF C80-204*NF EN 62418:2011 Semiconductor devices - Metallization stress void test
- NF P24-351:1997 Metal joinery. Windows, curtain walling, metal frame panels. Protection against corrosion and conservation of surface conditions.
- NF L10-005-2*NF EN 2032-2:1994 Aerospace series. Metallic materials. Part 2 : coding of metallurgical condition in delivery condition.
- NF EN 2032-2:1994 Série aérospatiale - Matériaux métalliques - Partie 2 : codification des états métallurgiques à l'état de livraison.
- NF EN 2600:2018 Série aérospatiale - Désignation des demi-produits métalliques - Règles
- NF EN 4000:2002 Série aérospatiale - Matériaux métalliques - Règles pour la rédaction et la présentation des normes dimensionnelles des demi-produits métalliques
- NF L10-003*NF EN 2600:2018 Aerospace series - Designation of metallic semi-finished products - Rules
- NF C80-203*NF EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs).
- NF C28-927*NF EN 10341:2006 Cold rolled electrical non-alloy or alloy steel sheet and strip delivered in the semi-processed state
- NF L10-015*NF EN 4000:2002 Aerospace series - Metallic materials - Rules for the drafting and presentation of dimensional standards for metallic semi-finished products
- NF A95-171:1993 Metallic powders, excluding powders for hardmetals. Determination of dimensional changes associated with compacting and sintering.
- NF C96-022-4:2002 Semiconductor devices - Mechanical and climatic test methods - Part 4 : damp heat, steady state, highly accelerated stress test (HAST).
- NF C96-022-5:2003 Semiconductor devices - Mechanical and climatic test methods - Part 5 : steady-state temperature humidity bias life test.
- NF C96-022-5*NF EN 60749-5:2017 Semiconductor devices - Mechanical and climatic test methods - Part 5 : steady-state temperature humidity bias life test
- NF C96-022-4*NF EN 60749-4:2017 Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp Heat, steady state, highly accelerated stress test (HAST)
- NF EN 10341:2006 Bandes et tôles magnétiques laminées à froid en aciers non-allié et en acier allié livrées à l'état semi-fini
- NF EN 62418:2011 Dispositifs à semi-conducteurs - Essai sur les cavités dues aux contraintes de la métallisation
- NF EN 62417:2010 Dispositifs à semiconducteurs - Essais d'ions mobiles pour transistors à semiconducteur à oxyde métallique à effet de champ (MOSFET)
- NF C28-926:1996 Cold rolled electrical alloyed steel sheet and strip delivered in the semi-processed state.
German Institute for Standardization, stable semimetal
- DIN EN 62373:2007 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
- DIN 1725-5:1986 Aluminium alloys, casting alloys; ingots (pigs), liquid metal; composition
- DIN EN 62373:2007-01 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
- DIN EN 577:1995-09 Aluminium and aluminium alloys - Liquid metal - Specifications; German version EN 577:1995
- DIN 1725-5 Bb.1:1986 Aluminium alloys, casting alloys; ingots (pigs), liquid metal; composition; information on alloying processes
- DIN EN 60749-36:2003 Semiconductor devices - Mechanical and climatic test methods - Part 36: Acceleration, steady state (IEC 60749-36:2003); German version EN 60749-36:2003
- DIN 9430-2:1984-12 Aerospace; sampling of semi-finished products in light metals; wrought aluminium alloys
- DIN 9430-3:1984-12 Aerospace; sampling of semi-finished products in light metals; titanium and titanium alloys
- DIN EN 60749-36:2003-12 Semiconductor devices - Mechanical and climatic test methods - Part 36: Acceleration, steady state (IEC 60749-36:2003); German version EN 60749-36:2003 / Note: Under certain conditions, DIN EN 60749 (2002-09) remains valid alongside this standard until...
- DIN 17470:1984 Heating conductor alloys; technical delivery conditions for round and flat wire
- DIN 51367:1991-08 Testing of metal working fluids; determination of the stability of emulsified metal working fluids in hard water
- DIN EN 2032-2:1994-05 Aerospace series; metallic materials; part 2: coding of metallurgical condition in delivery condition; German version EN 2032-2:1994
- DIN EN 62418:2010-12 Semiconductor devices - Metallization stress void test (IEC 62418:2010); German version EN 62418:2010
- DIN 9430-3:1984 Aerospace; sampling of semi-finished products in light metals; titanium and titanium alloys
- DIN 9430-2:1984 Aerospace; sampling of semi-finished products in light metals; wrought aluminium alloys
- DIN EN 2032-2:1994 Aerospace series; metallic materials; part 2: coding of metallurgical condition in delivery condition; German version EN 2032-2:1994
- DIN EN ISO 10070:2020-04 Metallic powders - Determination of envelope-specific surface area from measurements of the permeability to air of a powder bed under steady-state flow conditions (ISO 10070:2019); German version EN ISO 10070:2019
- DIN EN 4000:2003-05 Aerospace series - Metallic materials - Rules for the drafting and presentation of dimensional standards for metallic semi-finished products; German and English version EN 4000:2001
- DIN 51367:1991 Testing of metal working fluids; determination of the stability of emulsified metal working fluids in hard water
- DIN EN 577:1995 Aluminium and aluminium alloys - Liquid metal - Specifications; German version EN 577:1995
- DIN EN 4000:2003 Aerospace series - Metallic materials - Rules for the drafting and presentation of dimensional standards for metallic semi-finished products; German and English version EN 4000:2001
- DIN 9430-1:1984-12 Aerospace; sampling of semi-finished products in light metals; wrought aluminium alloys, titanium and titanium alloys; general
- DIN EN 2600:2019-03 Aerospace series - Designation of metallic semi-finished products - Rules; German and English version EN 2600:2018
- DIN EN 2600:2019 Aerospace series - Designation of metallic semi-finished products - Rules; German and English version EN 2600:2018
- DIN EN 2600:2018 Aerospace series - Designation of metallic semi-finished products - Rules; German and English version FprEN 2600:2018
- DIN EN 10341:2006 Cold rolled electrical non-alloy and alloy steel sheet and strip delivered in the semi-processed state Enlish version of DIN EN 10341:2006-08
- DIN EN 10341:2006-08 Cold rolled electrical non-alloy and alloy steel sheet and strip delivered in the semi-processed state; German version EN 10341:2006
- DIN EN 60749-4:2003 Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST) (IEC 60749-4:2002); German version EN 60749-4:2002
- DIN EN 60749-4:2017-11 Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST) (IEC 60749-4:2017); German version EN 60749-4:2017 / Note: DIN EN 60749-4 (2003-04) remains valid alongside this stand...
- DIN 9430-1:1984 Aerospace; sampling of semi-finished products in light metals; wrought aluminium alloys, titanium and titanium alloys; general
- DIN EN ISO 10070:2020 Metallic powders - Determination of envelope-specific surface area from measurements of the permeability to air of a powder bed under steady-state flow conditions (ISO 10070:2019)
- DIN EN 60749-5:2018-01 Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test (IEC 60749-5:2017); German version EN 60749-5:2017 / Note: DIN EN 60749-5 (2003-09) remains valid alongside this standard until 2020...
- DIN EN 60749-5:2003 Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test (IEC 60749-5:2003); German version EN 60749-5:2003
- DIN 31665:1993 Plain bearings; testing of bearing metals; resistance to corrosion by lubricants and static conditions
- DIN EN 62417:2010-12 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
British Standards Institution (BSI), stable semimetal
- BS EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
- BS EN 60749-36:2003 Semiconductor devices - Mechanical and climatic test methods - Acceleration, steady state
- BS EN 60749-4:2002 Semiconductor devices - Mechanical and climatic test methods - Damp heat, steady state, highly accelerated stress test (HAST)
- BS IEC 62373-1:2020 Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Fast BTI test for MOSFET
- BS EN 62418:2010 Semiconductor devices. Metallization stress void test
- BS ISO 19819:2004 Metallic materials - Tensile testing in liquid helium
- BS EN 60749-5:2003 Semiconductor devices - Mechanical and climatic test methods - Steady-state temperature humidity bias life test
- BS EN 60749-4:2017 Semiconductor devices. Mechanical and climatic test methods - Damp heat, steady state, highly accelerated stress test (HAST)
- BS IEC 63275-1:2022 Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Test method for bias temperature instability
- 18/30381548 DC BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
- 17/30366375 DC BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
- BS EN ISO 10070:2019 Metallic powders. Determination of envelope-specific surface area from measurements of the permeability to air of a powder bed under steady-state flow conditions
- BS 6729:1987 Method for determination of the dynamic fracture toughness of metallic materials
- BS EN 4000:2002 Aerospace series - Metallic materials - Rules for the drafting and presentation of dimensional standards for metallic semi-finished products
- BS EN 2600:2018 Aerospace series. Designation of metallic semi-finished products. Rules
- BS EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
- BS ISO 6282:2018 Plain bearings. Metallic thin-walled half bearings. Determination of the $Gs0, 01*-limit
- 19/30369642 DC BS EN ISO 10070. Metallic powders. Determination of envelope-specific surface area from measurements of the permeability to air of a powder bed under steady-state flow conditions
- BS EN 60749-5:2017 Tracked Changes. Semiconductor devices. Mechanical and climatic test methods. Steady-state temperature humidity bias life test
- 23/30469486 DC BS EN IEC 63378-2. Thermal standardization on semiconductor packages - Part 2. 3D thermal simulation models of discrete semiconductor packages for steady-state analysis
- BS EN 10341:2006 Cold rolled electrical non-alloy and alloy steel sheet and strip delivered in the semi-processed state
Taiwan Provincial Standard of the People's Republic of China, stable semimetal
Danish Standards Foundation, stable semimetal
- DS/EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
- DS/EN 577:1996 Aluminium and aluminium alloys - Liquid metal - Specifications
- DS/EN 60749-36:2003 Semiconductor devices - Mechanical and climatic test methods - Part 36: Acceleration, steady state
- DS/EN 62418:2010 Semiconductor devices - Metallization stress void test
- DS/EN 4000:2002 Aerospace series - Metallic materials - Rules for the drafting and presentation of dimensional standards for metallic semi-finished products
- DS/EN 10341:2006 Cold rolled electrical non-alloy and alloy steel sheet and strip delivered in the semi-processed state
- DS 10601:1955 Heat treatment of metallic materials in solid state. Terminology and definitions
- DS/EN 60749-5:2003 Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test
- DS/EN 60749-4/Corr.1:2004 Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
- DS/EN 60749-4:2003 Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
- DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
ES-UNE, stable semimetal
- UNE-EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)
- UNE-EN 62418:2010 Semiconductor devices - Metallization stress void test (Endorsed by AENOR in October of 2010.)
- UNE-EN ISO 10070:2020 Metallic powders - Determination of envelope-specific surface area from measurements of the permeability to air of a powder bed under steady-state flow conditions (ISO 10070:2019)
- UNE-EN 4000:2001 Aerospace series- Metallic materials- Rules for the drafting and presentation of dimensional standards for metallic semi-finished products. (Endorsed by AENOR in February of 2002.)
- UNE-EN 2600:2018 Aerospace series - Designation of metallic semi-finished products - Rules (Endorsed by Asociación Española de Normalización in February of 2019.)
- UNE-EN 60749-4:2017 Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST) (Endorsed by Asociación Española de Normalización in July of 2017.)
- UNE-EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)
Professional Standard - Machinery, stable semimetal
Professional Standard - Aviation, stable semimetal
PL-PKN, stable semimetal
Korean Agency for Technology and Standards (KATS), stable semimetal
- KS D 0068-2002(2022) Glossary of terms used in amorphous metals
- KS D ISO 19819:2005 Metallic materials-Tensile testing in liquid helium
- KS D 0069-2002(2022) Method of determining the crystallization temperatures of amorphous metals
- KS D ISO 10070-2004(2019) Metallic powders-Determination of envelope-specific surface area from measurements of the permeability to air of a powder bed under steady-state flow conditions
- KS D 0069-2002(2017) Method of determining the crystallization temperatures of amorphous metals
- KS C IEC 60749-4:2003 Semiconductor devices-Mechanical and climatic test methods-Part 4:Damp heat, steady state, highly accelerated stress test(HAST)
- KS C IEC 60749-4:2020 Semiconductor devices — Mechanical and climatic test methods — Part 4: Damp heat, steady state,highly accelerated stress test(HAST)
European Committee for Standardization (CEN), stable semimetal
- EN 577:1995 Aluminium and aluminium alloys - Liquid metal - Specifications
- EN ISO 10070:2019 Metallic powders - Determination of envelope-specific surface area from measurements of the permeability to air of a powder bed under steady-state flow conditions (ISO 10070:2019)
- EN 2032-2:1994 Aerospace Series Metallic Materials Part 2: Coding of Metallurgical Condition in Delivery Condition
- EN 4000:2001 Aerospace series - Metallic materials - Rules for the drafting and presentation of dimensional standards for metallic semi-finished products
- EN 10165:1995 Cold Rolled Electrical Alloyed Steel Sheet and Strip Delivered in the Semi-Processed State
- EN 10126:1995 Cold Rolled Electrical Non-Alloyed Steel Sheet and Strip Delivered in the Semi-Processed State
Lithuanian Standards Office , stable semimetal
- LST EN 577-2000 Aluminium and aluminium alloys - Liquid metal - Specifications
- LST EN 62373-2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006)
- LST EN 60749-36-2003 Semiconductor devices. Mechanical and climatic test methods. Part 36: Acceleration, steady state (IEC 60749-36:2003)
- LST EN 4000-2002 Aerospace series - Metallic materials - Rules for the drafting and presentation of dimensional standards for metallic semi-finished products
- LST EN 2032-2-2001 Aerospace series - Metallic materials - Part 2: Coding of metallurgical condition in delivery condition
- LST EN 10341-2006 Cold rolled electrical non-alloy and alloy steel sheet and strip delivered in the semi-processed state
- LST EN 62418-2010 Semiconductor devices - Metallization stress void test (IEC 62418:2010)
AENOR, stable semimetal
- UNE-EN 577:1996 Aluminium and aluminium alloys - Liquid metal - Specifications
- UNE-EN 60749-36:2004 Semiconductor devices - Mechanical and climatic test methods -- Part 36: Acceleration, steady state
- UNE-EN 2032-2:1996 AEROSPACE SERIES. METALLIC MATERIALS. PART 2: CODING OF METALLURGICAL CONDITION IN DELIVERY CONDITION.
- UNE-EN 10341:2008 Cold rolled electrical non-alloy and alloy steel sheet and strip delivered in the semi-processed state
- UNE-EN 60749-5:2003 Semiconductor devices. Mechanical and climatic test methods. Part 5: Steady-state temperature humidity bias life test
- UNE-EN 60749-4:2003 Semiconductor devices - Mechanical and climatic test methods -- Part 4: Damp heat, steady state, highly accelerated stress test (HAST).
European Committee for Electrotechnical Standardization(CENELEC), stable semimetal
- EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
- EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
- EN 62418:2010 Semiconductor devices - Metallization stress void test
- EN 60749-36:2003 Semiconductor devices Mechanical and climatic test methods Part 36: Acceleration, steady state
- EN 60749-4:2017 Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
- EN 60749-5:2017 Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, stable semimetal
- GB/T 43096-2023 Determination of external specific surface area by powder layer permeability test under steady flow conditions of metal powder
- GB 5482-1993 Metallic materials-Dynamic tear testing method
- GB/T 5482-1993 Test method for dynamic tear energy of metallic materials
- GB/T 5482-2023 Test method for dynamic tearing of metallic materials
- GB/T 5482-2007 Test method of metallic materials Dynamic tear
- GB/T 15652-1995 Generic specification for gas sensors of metal-oxide semiconductor
- GB/T 15653-1995 Measuring methods for gas sensors of metal-oxide semiconductor
- GB/T 4937.4-2012v Semiconductor Device Mechanical and Climatic Test Methods Part 4: Highly Accelerated Steady State Damp Heat Test (HAST)
- GB/T 4937.4-2012 Semiconductor devices.Mechanical and climatic test methods.Part 4:Damp heat,steady state,highly accelerated stress test(HAST)
Underwriters Laboratories (UL), stable semimetal
- UL 2565-2013 UL Standard for Safety Manual and Semiautomatic Metal Sawing Machines (First Edition; Reprint with revisions through and including July 26@ 2017)
- UL 2565 BULLETIN-2007 UL Standard for Safety Manual and Semiautomatic Metal Sawing Machines
- UL SUBJECT 2565-2007 OUTLINE OF INVESTIGATION FOR Manual and Semiautomatic Metal Sawing Machines (Issue 1)
TH-TISI, stable semimetal
United States Navy, stable semimetal
未注明发布机构, stable semimetal
Professional Standard - Chemical Industry, stable semimetal
CZ-CSN, stable semimetal
- CSN 25 1141-1962 Steel pocket rules, semi-cloused metale cases
- CSN 25 1140-1962 Steel pocket rules, semi-cloused metale cases
- CSN 42 1304-1989 Metallurgical semi-finished products and products made of non-ferrous metals. Marking
- CSN 42 0480-1982 Aluminium and aluminium alloys. Determination of hydrogen content in liquid mettal
- CSN 20 0465-1989 The metal working machines. The semiautomatic pulling up machines. The series. The sizes
- CSN 42 0340-1982 Metal testing. Standard impact bending test method for large pieces
RU-GOST R, stable semimetal
- GOST 33810-2016 Metal barrels for food liquids. Specifications
- GOST 27861-1988 Billets and semiproducts of nonferrous metals and their alloys. Marking
- GOST 21132.0-1975 Aluminium alloys. Method for determination of hydrogen content in molten metal
- GOST 2171-1990 Pieces, products, semi-finished products and billets of non-ferrous metals and alloys. Grade designation
- GOST 25501-1982 Stocks and semifinished products of non-ferrous metals and alloys. Terms and definitions
- GOST R 52915-2008 Automatic and semi-automatic metalforming machines. Safety requirements
- GOST 24047-1980 Half-finished products out of non-ferrous metals and their alloys. Sampling for tensile test
- GOST 31542-2012 Automatic and semi-automatic metal forming machines. Safety requirements
- GOST 9.901.4-1989 Unified system of corrosion and ageing protection. Metals and alloys. Tests for corrosion cracking of specimens under uniaxial tension
DE-VDA, stable semimetal
SE-SIS, stable semimetal
- SIS SS-ISO 8044:1989 Corrosion of metals and alloys — Terms and definitions
- MNC 545-1971 Summary of Swedish Standards for semi-manufactured products of light meta/ (except tubes)
- MNC 570-1970 Summary of Swedish Standards for semi-manufactured products of various metals. Strip and wire
- MNC 580-1992 Metallic materials — Semi-manufacturedproducts — Technical delivery requirements — Summary
ANS - American Nuclear Society, stable semimetal
- 54.8-1988 Liquid Metal Fire Protection in LMR Plants
CH-SNV, stable semimetal
PH-BPS, stable semimetal
- PNS IEC 62373-1:2021 Semiconductor devices - Bias-temperature stability test for metal-ox ide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
International Organization for Standardization (ISO), stable semimetal
- ISO 10070:1991 Metallic powder; determination of envelope-specific surface area from measurements of the permeability to air of a powder bed under steady-state flow conditions
- ISO 19819:2004 Metallic materials - Tensile testing in liquid helium
- ISO 10070:2019 Metallic powders — Determination of envelope-specific surface area from measurements of the permeability to air of a powder bed under steady-state flow conditions
- ISO 6892-4:2015 Metallic materials - Tensile testing - Part 4: Method of test in liquid helium
(U.S.) Ford Automotive Standards, stable semimetal
- FORD M5J3-A-1990 GRAY METALLIC OFFICE EQUIPMENT SEMIGLOSS ENAMEL
- FORD WSK-M11P54-A-2013 PERFORMANCE, SEMISTRUCTURAL ADHESIVE, POLYURETHANE, METAL TO METAL, TWO COMPONENT ***TO BE USED WITH FORD WSS-M99P1111-A***
BE-NBN, stable semimetal
IT-UNI, stable semimetal
(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, stable semimetal
- JEDEC JEP184-2021 Guideline for evaluating Bias Temperature Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion
American National Standards Institute (ANSI), stable semimetal
Military Standard of the People's Republic of China-General Armament Department, stable semimetal
- GJB 8375-2015 Test method for dynamic torsion of metallic materials
- GJB 8374-2015 Test method for dynamic tension of metallic materials
- GJB 8799-2015 Dynamic compression test method for metallic materials
YU-JUS, stable semimetal
- JUS M.C3.366-1988 Plain bearings. Metallic thin-walled half bearings. Determination of the R0,01
- JUS M.K3.010-1989 Building hardvvare. Symbols for materials and states of the metal surface
- JUS N.R3.151-1981 Metal film resistors, lowpower, high stability, climatic severities 55/155/21
- JUS M.C3.356-1989 Plain bearings. Pressed bimetallic half thrust washers. Features and tolerances
Aerospace Industries Association/ANSI Aerospace Standards, stable semimetal
Professional Standard - Building Materials, stable semimetal
- JC/T 2024-2010 Translucent alumina ceramic tube for metal halide lamps
ES-AENOR, stable semimetal
Professional Standard - Railway, stable semimetal
Professional Standard - Electron, stable semimetal
- SJ 20287-1993 detail specification for JT54LS123 type monostable multwibrator of LS-TTL semiconductor integrated circuits
- SJ 20025-1992 Generic specification for gas sensors of metal-oxide semiconductor
- SJ 51929/2-1996 Resistors,fixed,metal film,high stability,style RJ24,Detail specification for
- SJ 51929.4-1995 Resistors,fixed,metal film,high stability,style RJ52,detail specification for
- SJ 51929.5-1995 Resistors,fixed,metal film,high stability,style RJ53,detail specification for
- SJ 51929.6-1995 Resistors,fixed,metal film,high stability,style RJ54,detail specification for
- SJ 51929.7-1995 Resistors,fixed,metal film,high stability,style RJ55,detail specification for
- SJ 51929.8-1995 Resistors,fixed,metal film,high stability,style RJ56,detail specification for
- SJ 51929/10-2000 Resistors,fixed,metal film,high stability,style RJ57,detail specification for
- SJ 51929/9-1997 Resistors,fixed,metal film,high stability,style RJ23,detail specification for
- SJ 51929/11-2000 Resistors,fixed,metal film,high stability,style RJ58,detail specification for
- SJ 51929/3-1996 Resistors,fixed,metal film,high stability,style RJ25,Detail specification for
- SJ 20026-1992 Measuring methods for gas sensors of metal-oxide semiconductor
- SJ 20079-1992 Test mehods for gas sensors of metal-oxide semiconductor
- SJ 50597/39-1996 Semiconductor integrated circuits Detail specification for type JC54HC221 HCMOS dual monostable multivibrators with schmitt triggers inputs
- SJ/Z 9175-1995 Specifications for determination of 0.25W high-stability metal film resistors used for VCR
- SJ/T 10176-1991 Detail specification of metal rhomb package for semiconductor integrated circuits
KR-KS, stable semimetal
- KS B 0611-2022 Radii of machine parts(Press working of sheet metals)
- KS C IEC 60749-4-2020 Semiconductor devices — Mechanical and climatic test methods — Part 4: Damp heat, steady state,highly accelerated stress test(HAST)
Society of Automotive Engineers (SAE), stable semimetal
- SAE AMS4017J-1991 Aluminum Alloy, Sheet and Plate, 2.5Mg 0.25Cr, Strain-Hardened, Half-Hard, and Stabilized (Reaffirmed: 01 May 1995)
- SAE AMS4017J-1995 ALUMINUM ALLOY SHEET AND PLATE 2.5Mg - 0.25Cr (5052-H34) Strain-Hardened, Half-Hard, and Stabilized
- SAE J1106-2012 Laboratory Testing Machines for Measuring the Steady State Force and Moment Properties of Passenger Car Tires
- SAE AMS4595-2018 Copper Nickel Tin Alloy Plate 77Cu – 15Ni – 8Sn Solution Annealed and Spinodal Hardened (TX 00)
- SAE AMS4782E-1995 Nickel Alloy, Brazing Filler Metal 71Ni 10Si 19Cr, 1975 to 2075°F (1080 to 1135°C) Solidus-Liquidus Range (Reaffirmed: 01 Sept 2000)
- SAE AMS4779F-1995 Nickel Alloy, Brazing Filler Metal 94Ni 3.5Si 1.8B 1800 to 1950°F (982 to 1066°C) Solidus-Liquidus Range (Reaffirmed: 01 Sept 2000)
- SAE AMS4017K-2017 Aluminum Alloy Sheet and Plate 2.5Mg - 0.25Cr (5052-H34) Strain-Hardened, Half-Hard, and Stabilized
- SAE AMS4017K-2004 Aluminum Alloy, Sheet and Plate, 2.5Mg 0.25Cr, (5052-H34), Strain-Hardened, Half-Hard, and Stabilized
- SAE AMS4777F-1995 Nickel Alloy, Brazing Filler Metal 82Ni 4.5Si 7.0Cr 3.1B 3.0Fe, 1780 to 1830°F (971 to 999°C) Solidus-Liquidus Range (Reaffirmed: 01 Aug 2000)
- SAE AMS4775G-1995 Nickel Alloy, Brazing Filler Metal 73Ni 0.75C 4.5Si 14Cr 3.1B 4.5Fe, 1790 to 1970°F (977 to 1077°C) Solidus-Liquidus Range (Reaffirmed: 01 Aug 2000)
- SAE J1107-2012 Laboratory Testing Machines and Procedures for Measuring the steady state Force and Moment Properties of Passenger Car Tires
- SAE AMS4776F-1995 Nickel Alloy, Brazing Filler Metal 73Ni 4.5Si 14Cr 3.1B 4.5Fe (Low Carbon) 1790 to 1970°F (977 to 1077°C) Solidus-Liquidus Range (Reaffirmed: 01 Aug 2000)
- SAE AMS4994-1992 Titanium Alloy, Powdered Metal Products 6Al 4V Hot Isostatically Pressed, Annealed
- SAE AMS4994A-2006 Titanium Alloy Powdered Metal Products 6Al - 4V Hot Isostatically Pressed, Annealed UNS R56400
农业农村部, stable semimetal
- NY/T 1860.38-2016 Test Guidelines for Determination of Physicochemical Properties of Pesticides Part 38: Stability to metals and metal ions
Professional Standard - Electricity, stable semimetal
- DL/T 1702-2017 Guidelines for Condition Maintenance of Metal Oxide Surge Arresters
- DL/T 1703-2017 Guidelines for State Evaluation of Metal Oxide Surge Arresters
CN-QIYE, stable semimetal
- Q/GDW 453-2010 Guidelines for Condition Maintenance of Metal Oxide Surge Arresters
National Aeronautics and Space Administration (NASA), stable semimetal
- NASA NACA-TN-1197-1947 Some investigations of the general instability of stiffened metal cylinders VIII - stiffened metal cylinders subjected to pure torsion
CEN - European Committee for Standardization, stable semimetal
- EN 2600:2018 Aerospace series - Designation of metallic semi-finished products - Rules
Professional Standard - Non-ferrous Metal, stable semimetal
- YS/T 679-2008 Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-state surface photovoltage
Military Standard of the People's Republic of China-Commission of Science,Technology and Industry for National Defence, stable semimetal
- GJB 5372-2005 Metal material dynamic impact test-instrumental method
American Society for Testing and Materials (ASTM), stable semimetal
- ASTM E604-83(2008) Standard Test Method for Dynamic Tear Testing of Metallic Materials
- ASTM D4388-20 Standard Specification for Nonmetallic Semi-Conducting and Electrically Insulating Rubber Tapes
- ASTM E604-83(1994) Standard Test Method for Dynamic Tear Testing of Metallic Materials
- ASTM E604-83(2002) Standard Test Method for Dynamic Tear Testing of Metallic Materials
- ASTM E604-83 Standard Test Method for Dynamic Tear Testing of Metallic Materials
- ASTM E604-18 Standard Test Method for Dynamic Tear Testing of Metallic Materials
U.S. Military Regulations and Norms, stable semimetal
European Association of Aerospace Industries, stable semimetal
- AECMA PREN 2600-1987 Aerospace Series Designation of Metallic Semi-Finished Products Rules Edition P1
- AECMA PREN 3848-1994 Aerospace Series Semi-Finished Metallic Products Method of Measuring for from Deviations Edition P1
- AECMA PREN 3848-1996 Aerospace Series Semi-Finished Metallic Products Methods of Measuring from Deviations Edition P2
ASD-STAN - Aerospace and Defence Industries Association of Europe - Standardization, stable semimetal
- PREN 3848-1994 Aerospace Series Semi-Finished Metallic Products Method of Measuring for from Deviations (Edition P1)
- PREN 3848-1996 Aerospace Series Semi-Finished Metallic Products Methods of Measuring from Deviations (Edition P2)
- PREN 2600-1987 Aerospace Series Designation of Metallic Semi-Finished Products Rules (Edition P1)
- PREN 4000-1997 Aerospace Series Metallic Materials Rules for the Drafting and Presentation of Dimensional Standards for Metallic Semi-Finished Products (Edition P 2)
SAE - SAE International, stable semimetal
- SAE AMS4017H-1989 ALUMINUM ALLOY SHEET AND PLATE@ 2.5Mg - 0.25Cr (5050-H34) Strain-Hardened@ Half-Hard@ and Stabilized (UNS A95052)
- SAE AMS4017L-2018 Aluminum Alloy Sheet and Plate 2.5Mg - 0.25Cr (5052-H34) Strain-Hardened@ Half-Hard@ and Stabilized (UNS A95052)
ZA-SANS, stable semimetal
- SANS 367:2005 Plain bearings - Metallic thin-walled half bearings - Determination of the sigma 0,01*-limit