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Silicon Spectrum

Silicon Spectrum, Total:128 items.

In the international standard classification, Silicon Spectrum involves: Analytical chemistry, Testing of metals, Semiconducting materials, Non-ferrous metals, Ferroalloys, Optical equipment, Powder metallurgy, Leather technology, General methods of tests and analysis for food products, Insulating fluids, Non-metalliferous minerals, Integrated circuits. Microelectronics, Solar energy engineering, Terminology (principles and coordination), Ferrous metals, Ceramics, Environmental protection, Water quality, Products of the chemical industry, Conducting materials.

国家市场监督管理总局、中国国家标准化管理委员会, Silicon Spectrum

GB/T 40110-2021 Surface chemical analysis—Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
GB/T 12964-2018 Monocrystalline silicon polished wafers
GB/T 40312-2021 Ferrophosphorus—Determination of phosphorus, silicon, manganese and titanium content—Wavelength dispersive X-ray fluorescence spectrometry method (fused cast bead method)
GB/T 19921-2018 Test method for particles on polished silicon wafer surfaces
GB/T 5687.13-2021 Ferrochromium—Determination of chromium, silicon, manganese, titanium, vanadium, iron contents—Wavelength dispersive X-ray fluorescence spectrometry (fused cast bead method)
GB/T 40279-2021 Test method for thickness of films on silicon wafer surface—Optical reflection method
GB/T 4333.8-2022 Ferrosilicon—Determination of calcium content—Flame atomic absorption spectrometry

British Standards Institution (BSI), Silicon Spectrum

BS ISO 14706:2000 Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
BS ISO 14706:2014 Surface chemical analysis. Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
BS ISO 14706:2001 Surface chemical analysis. Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
BS 7012-6:1998 Light microscopes. Specification for spectral filters

Korean Agency for Technology and Standards (KATS), Silicon Spectrum

KS D ISO 14706:2003 Surface chemical analysis－Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence(TXRF) spectroscopy
KS E 3076-2017 Methods for X－ray fluorescence spectrometric analysis of silica stone and silica sand
KS E 3076-2022 Methods for X-ray fluorescence spectrometric analysis of silica stone and silica sand
KS M ISO 5400-2012(2022) Leather－Determination of total silicon content－Reduced molybdosilicate spectrometric method
KS M ISO 5400:2012 Leather-Determination of total silicon content-Reduced molybdosilicate spectrometric method
KS D 1683-2004 Method for emission spectrochemical analysis of silver ingot
KS D ISO 4139-2002(2017) Metallic and other non-organic coatings－Measurement of coating thicknesses－Fizeau multiple-beam interferometry method
KS D 0078-2008(2018) Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy

American Society for Testing and Materials (ASTM), Silicon Spectrum

ASTM F1619-95(2000) Standard Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle
ASTM F1727-97 Standard Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Silicon Spectrum

GB/T 24578-2015 Test method for measuring surface metal contamination on silicon wafers by total reflection X-Ray fluorescence spectroscopy
GB/T 24578-2009 Test method for measuring surface metal contamination on silicon wafers by total reflection X-ray fluorescence spectroscopy
GB/T 12964-2003 Monocrystalline silicon polished wafers
GB/T 29506-2013 300 mm polished monocrystalline silicon wafers
GB/T 25188-2010 Thickness measurements for ultrathin silicon oxide layers on silicon wafers X-ray photoelectron spectroscopy
GB/T 26601-2011 Microscopes.Spectral filters
GB/T 30656-2014 Polished monocrystalline silicon carbide wafers
GB/T 30656-2023 Silicon carbide single crystal polished wafer
GB/T 26065-2010 Specification for polished test silicon wafers
GB/T 17169-1997 Test method for the surface quality of polished silicon wafers and epitaxial wafers by optical-reflection
GB/T 19921-2005 Test method of particles on silicon wafer surfaces
GB/T 29055-2019(英文版) Multi crystalline silicon wafers for photovoltaic solar cell
GB/T 42789-2023 Test method for surface gloss of silicon wafer
GB/T 14140.1-1993 Silicon slices and wafers--Measuring of diameter--Optical projecting method
GB/T 6621-1995 Test methods for surface flatness of silicon polished slices
GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 4058-1995 Test method for detection of oxidation induced defects in polished silicon wafers
GB/T 4058-2009 Test method for detection of oxidation induced defects in polished silicon wafers
GB/T 32281-2015 Test method for measuring oxygen, carbon, boron and phosphorus in solar silicon wafers and feedstock.Secondary ion mass spectrometry
GB/T 24577-2009 Test methods for analyzing organic contaminants on silicon water surfaces by thermal desorption gas chromatography
GB/T 31351-2014 Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers
GB/T 42902-2023 Laser Scattering Method for Testing Surface Defects of Silicon Carbide Epitaxial Wafers
GB/T 30701-2014 Surface chemical analysis.Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy

Japanese Industrial Standards Committee (JISC), Silicon Spectrum

JIS H 0613:1978 Visual inspection for sliced and lapped silicon wafers
JIS H 0615:2021 Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy
JIS H 0615:1996 Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy

Professional Standard - Non-ferrous Metal, Silicon Spectrum

YS/T 985-2014 Polished reclaimed silicon wafers

Professional Standard - Machinery, Silicon Spectrum

JB/T 5590-1991 Optical filter of optical spectrum instrument
JB/T 9334-1999 Microscopes.The fundamental specification for spectral filters

工业和信息化部, Silicon Spectrum

YB/T 4780-2019 Determination of silicon, calcium and aluminum content in calcium silicon alloys by wavelength dispersive X-ray fluorescence spectrometry (cast glass plate method)
SJ/T 11629-2016 Online photoluminescence analysis method of silicon wafers and cells for solar cells
YB/T 4907-2021 Determination of ferromanganese, manganese-silicon alloys and metal manganese manganese, silicon, iron and phosphorus contents by wavelength dispersive X-ray fluorescence spectrometry

Group Standards of the People's Republic of China, Silicon Spectrum

T/CPIA 0037-2022 Specifications for Photovoltaic Crystalline Wafers
T/ZPP 016-2022 Photovoltaic silicon wafer debonding and inserting integrated technical requirements
T/IAWBS 005-2018 6 inch polished monocrystalline silicon carbide wafers
T/CQCAA 0005-2020 Determination of mercury in silicon dioxide -Atomic Fluorescence Spectrometry
T/ZZB 0648-2018 200 mm heavily phosphorus-doped single crystalline Czochralski silicon polished wafers
T/NXCL 017-2022 300 mm heavily phosphorus-doped single crystaline Czochralski silicon polished wafers
T/NXCL 016-2022 200 mm heavily antimony-doped single crystaline Czochralski silicon polished wafer
T/CPIA 0038-2022 Electroplated diamond wire for photovoltaic silicon wafer cutting
T/CPIA 0022-2020 Evaluation Requirements for Green Factory in Photovoltaic Silicon Wafer Manufacturing Industry
T/ICMTIA SM0027-2022 300mm p-type silicon single crystal polished wafer for advanced memory technology
T/CPIA 0021-2020 Green Design Product Evaluation Technical Specification for Photovoltaic Silicon Wafers
T/IAWBS 014-2021 Test method for dislocation density of silicon carbide polished wafers
T/SQIA 057-2023 Technical requirements for carbon footprint assessment of crystalline silicon photovoltaic cell
T/CSTM 00061-2018 Nickel alloy—Determination of silicon content—Flame atomic absorption spectrometric method

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, Silicon Spectrum

GB/T 4333.5-2016 Ferrosillicon—Determination of silicon, manganese, aluminium, calcium, chromium and iron contents—Wavelength dispersive X-ray fluorescence spectrometry (Fused cast bead method)
GB/T 33236-2016 Polycrystalline silicon—Determination of trace elements—Glow discharge mass spectrometry method

Professional Standard - Electron, Silicon Spectrum

SJ/T 11502-2015 Specification for polished monocrystalline silicon carbide wafers
SJ/T 11869-2022 Detailed specifications for silicon substrate white light power light emitting diode chips
SJ/T 11868-2022 Detailed specifications for silicon substrate blue power light emitting diode chips
SJ 3198-1989 Method for determination of Silicon,Iron,Magnesium and Copper in vacuum Silicon-Aluminium alloy by emission spectrum
SJ/T 11867-2022 Detailed specifications for silicon substrate blue light low-power light-emitting diode chips
SJ/T 11504-2015 Test method for measuring surface quality of polished monocrystalline silicon carbide
SJ/T 11503-2015 Test methods for measuring surface roughness of polished monocrystalline silicon carbide wafers
SJ/Z 3206.5-1989 Treatment methods for sensitized plate and film photograph for chemical analysis using spectrum

中国有色金属工业总公司, Silicon Spectrum

YS/T 25-1992 Silicon polishing wafer surface cleaning method

Association Francaise de Normalisation, Silicon Spectrum

NF A07-520:1971 Analysis of aluminium silicon and aluminium-silicon-copper alloys by emission spectrography.
NF T90-007:2001 Water quality - Determination of soluble silicates - Molecular absorption spectrometric method.
NF T77-152:1987 Basic silicones for industrial use. Determination of silicon content (silicon content less than 1 per cent (m/m)). Method by atomic absorption spectrometry.

RU-GOST R, Silicon Spectrum

GOST 16412.9-1991 Iron powder. Method of photoelectric spectral analysis of silicon, manganese and phosphorus
GOST 9853.6-1979 Sponge titanium. Spectral method for the determination of silicon, iron and nickel
GOST 18385.2-1979 Niobium. Spectral method for the determination of silicon, titanium and iron
GOST 23687.2-1979 Alloy of copper-beryllium. Spectral method of the determination of magnesium, iron, aluminium, silicon, lead
GOST 851.10-1993 Primary magnesium. Spectral method for determination of silicon, iron, nickel, aluminium, copper and mangenese
GOST 851.10-1987 Primary magnesium. Srectral method for the determination of silicon, iron, nickel, aluminium, copper, marganese content

Hebei Provincial Standard of the People's Republic of China, Silicon Spectrum

DB13/T 5091-2019 Determination of ferromanganese, manganese silicon, ferromanganese nitride and metal manganese silicon, manganese and phosphorus content Wavelength dispersive X-ray fluorescence spectrometry (cast glass method)

GOSTR, Silicon Spectrum

GOST 9853.23-1996 Sponge titanium. Spectral method for determination of silicon, iron, nickel

IT-UNI, Silicon Spectrum

AENOR, Silicon Spectrum

UNE 59027:1988 LEATHER. DETERMINATION OF TOTAL SILICON CONTENT. REDUCED MOLYBDOSILICATE SPECTROMETRIC METHOD
UNE 35056-1:1983 FERROSILICON. DETERMINATION OF ALUMINIUM CONTENT. FLAME ATOMIC ABSORPTION SPECTROMETRIC METHOD

ES-UNE, Silicon Spectrum

UNE 59027:1988 ERRATUM LEATHER. DETERMINATION OF TOTAL SILICON CONTENT. REDUCED MOLYBDOSILICATE SPECTROMETRIC METHOD

Professional Standard - Commodity Inspection, Silicon Spectrum

SN/T 0770-1999 Determination of silicon oxide in middle carbon flake graphite.Molybdenum blue photometric method
SN/T 2489-2010 Determination of Cr、Mn、P、Si contents in pig-irons-Photoelectric emission spectroscopic method
SN/T 2749-2010 Determination of manganese,silicon,aluminum,calcium,titanium in rare earth ferrosilicon.Wave dispersive X-ray fluorescence spectrometry method
SN/T 2950-2011 Determination of silicon, aluminum, calcium, iron, phosphorus, chromium, titanium content in export rare earth magnesium ferrosilicon X-ray fluorescence spectrometry
SN/T 3604-2013 Determination of copper, silicon, manganese, zinc, aluminum and iron in zinc concentrate ore.X-ray fluorescence spectrometry

International Organization for Standardization (ISO), Silicon Spectrum

ISO 5400:1984 Leather; Determination of total silicon content; Reduced molybdosilicate spectrometric method
ISO 9502:1993 Metallurgical-grade fluorspar; determination of silica content; reduced-molybdosilicate spectrometric method
ISO 5438:1993 Acid-grade and ceramic-grade fluorspar; determination of silica content; reduced-molybdosilicate spectrometric method
ISO 9502:1989 Metallurgical-grade fluorspar — Determination of silica content — Reduced-molybdosilicate spectrometric method

YU-JUS, Silicon Spectrum

JUS H.B8.091-1980 Cryolite, natural and artificial. Determination oj' si licem content. RcduceJ molybdosilicute speetrophotometric method

European Committee for Standardization (CEN), Silicon Spectrum

CEN/TR 10354:2011 Chemical analysis of ferrous materials - Analysis of ferro-silicon - Determination of Si and Al by X-ray fluorescence spectrometry
PD CEN/TR 10354:2011 Chemical analysis of ferrous materials - Analysis of ferro-silicon - Determination of Si and Al by X-ray fluorescence spectrometry

Defense Logistics Agency, Silicon Spectrum

DLA SMD-5962-87729 REV E-2006 MICROCIRCUIT, DIGITAL, ECL, 8-LINE MULTIPLEXER, MONOLITHIC SILICON
DLA SMD-5962-87752 REV C-2006 MICROCIRCUIT, DIGITAL, ECL, PHASE FREQUENCY DETECTOR, MONOLITHIC SILICON
DLA SMD-5962-87792 REV B-2005 MICROCIRCUIT, DIGITAL, ECL MULTIPLEXER MONOLITHIC SILICON
DLA SMD-5962-94622 REV A-2011 MICROCIRCUIT, LINEAR, LAMP DRIVER, FLUORESCENT, MONOLITHIC SILICON
DLA SMD-5962-88527 REV B-2001 MICROCIRCUIT, DIGITAL, ECL, 8-LINE MULTIPLEXER, MONOLITHIC SILICON
DLA SMD-5962-88560 REV B-2006 MICROCIRCUIT, MEMORY, DIGITAL, ECL, 64-BIT RAM, MONOLITHIC SILICON
DLA SMD-5962-94622-1994 MICROCIRCUIT, LINEAR, LAMP DRIVER, FLUORESCENT, MONOLITHIC SILICON
DLA SMD-5962-87730 REV B-1991 MICROCIRCUITS, DIGITAL, ECL, 4 WIDE OR-AND/OR-AND-INVERT GATE, MONOLITHIC SILICON
DLA SMD-5962-87751 REV A-2007 MICROCIRCUIT, DIGITAL, ECL, COUNTER CONTROL LOGIC, MONOLITHIC SILICON
DLA SMD-5962-87773 REV B-2007 MICROCIRCUIT, DIGITAL, ECL, ONE SHOT MULTIVIBRATOR, MONOLITHIC SILICON
DLA SMD-5962-88577 REV C-2001 MICROCIRCUIT, DIGITAL, ECL, 3 INPUT OR-AND/OR-AND-INVERT GATE, MONOLITHIC SILICON
DLA DSCC-VID-V62/03638 REV B-2008 MICROCIRCUIT, LINEAR, DIFFERENTIAL COMPARATOR WITH STROBES, MONOLITHIC SILICON

PL-PKN, Silicon Spectrum

PN C04348-1970 Solid fuels. Determinatiom of silicon, aluminium, iron, calcium and mag- nesium in ashes by the spectrogra- phic method

Society of Motion Picture and Television Engineers (SMPTE), Silicon Spectrum

SMPTE ST 117M-2001 Motion-Picture Film - Photographic Audio Record - Spectral Diffuse Density
SMPTE RP 180-1999 Spectral Conditions Defining Printing Density in Motion-Picture Negative and Intermediate Films

Military Standard of the People's Republic of China-General Armament Department, Silicon Spectrum

GJB 2918A-2017 Specification for polished wafers of molten silicon single crystal in detector grade high resistance zone

RO-ASRO, Silicon Spectrum

SR ISO 4139:1995 Ferrosilicon. Determination of aluminium content. Flame atomic absorption spectrometric method
STAS 11359/8-1980 NATIVE SULPHUR ORES AND CONCENTRATES Aluminium, calcium, magnesium, iron and silicon spectral analysis

Professional Standard - Ferrous Metallurgy, Silicon Spectrum

YB/T 5159-2007 Determination of trace boron in graphite products of High purty by spectroscopical method The powder method
YB/T 5159-1993 Powder method for spectroscopic determination of silicon and iron in high-purity graphite products